Results 121 to 130 of about 12,880 (229)

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

, 2008
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the
Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com, Wang, CM, Ran, JX, Liu, HX, Chen, YL, Li, JM, Xiao, HL, Li, JP, Luo, WJ, Wang, XL, Yang, FH, Guo, LC   +11 more
core  

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

高性能1mm SiC基AlGaN/GaN功率HEMT研制

, 2006
在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该1mm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W ...
魏珂, 陈晓娟, 王晓亮, 李成瞻, 和致经, 梁晓新, 罗卫军, 刘新宇   +7 more
core  

Considerations for early life genetic therapies in cystic fibrosis. [PDF]

Am J Physiol Lung Cell Mol Physiol
Cooney AL, Thornell IM, Pezzulo AA, Fischer AJ, Cook DP, Abou Alaiwa MH, Larson Ode KM, Uc A, Zabner J, Ryan AL, Stoltz DA, Sinn PL, McCray PB, Meyerholz DK.   +13 more
europepmc   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Advanced EELS spectroscopy characterization of AlGaN/GaN materials [PDF]

BIO Web of Conferences
Drouillas Esteve, Warot-Fonrose Bénédicte, Mattei Jean-Gabriel   +2 more
doaj   +1 more source

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source

RTD/HEMT Logic Circuits and Their Functional Circuits Application

This paper describes low-power and high-speed RTD/HEMT (Resonant Tunneling Diode / High-Electron Mobility Transistor) logic circuits. In order to estimate RTD/HEMT logic gates using ordinary GaAs/A1GaAs HEMT in detail by using real device parameters ...
Nakashi, Kenichi, Taki, Hideo, Taniguchi, Kenji, Kudou, Yousuke   +3 more
core  

Characterization of 2DEG on WG semiconductors through sub-sampled 4DSTEM [PDF]

BIO Web of Conferences
Nicotra Giuseppe, Sfuncia Gianfranco, Robinson W Alex, Nicholls Daniel, Wells Jack, Mio M Antonio, Bongiorno Corrado, Bottari Cettina, Adamo Salvatore, Russo Alfio, Alessandrino Santi, Browning D Nigel, Spinella Corrado   +12 more
doaj   +1 more source

Beyond the Surface: Novel Therapy Approach for Pancreatitis in the Setting of CFTR Dysfunction. [PDF]

Case Rep Gastrointest Med
Wright BA, Hodapp E, Hornick DB, Peña TA.   +3 more
europepmc   +1 more source