Results 1 to 10 of about 856 (145)

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review [PDF]

Sensors, 2020
In the last two decades, GaN nanostructures of various forms like nanowires (NWs), nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have been reported for gas sensing applications. In this paper, we have reviewed our group’s work and the works published by other groups on the advances in GaN nanostructures-based sensors for
Md Ashfaque Hossain Khan, Mulpuri V Rao
exaly   +4 more sources

Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Journal of Low Power Electronics and Applications, 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Results in Physics, 2019
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan   +4 more
doaj   +1 more source

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies, 2019
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia, Simon Ravyts, Giel Van den Broeck, Johan Driesen   +3 more
doaj   +1 more source

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Materials Research Express, 2022
Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge.
Muhammad Saddique Akbar Khan, Menglai Lei, Huanqing Chen, Guo Yu, Rui Lang, Shukun Li, Xiaodong Hu   +6 more
doaj   +1 more source

Gallium Nitride Power Devices: A State of the Art Review

IEEE Access, 2023
Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities.
Ander Udabe, Igor Baraia-Etxaburu, David Garrido Diez   +2 more
doaj   +1 more source

Synthesized of gallium Nitride/PSi nano thin films using 532 nm wavelength by pulsed laser deposition technique [PDF]

Engineering and Technology Journal
The porous silicon (PSi) substrate was accurately synthesized using photoelectrochemical etching. A Nanofilm gallium nitride (GaN) was then precisely deposited on this PSi substrate using pulsed laser deposition (PLD).
Abeer Abbas, Ali Alwahib, Makram Fakhri, Subash C. B. Gopinath, U. Hashim   +4 more
doaj   +1 more source

The Modeling of GaN-FET Power Devices in SPICE

Energies, 2023
This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014.
Janusz Zarębski, Damian Bisewski
doaj   +1 more source