Results 1 to 10 of about 2,749 (180)
Energies, 2019 This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia +3 more
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Materials Research Express, 2022 Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge.
Muhammad Saddique Akbar Khan +6 more
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Gallium Nitride Power Devices: A State of the Art Review
IEEE Access, 2023 Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities.
Ander Udabe +2 more
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Synthesized of gallium Nitride/PSi nano thin films using 532 nm wavelength by pulsed laser deposition technique [PDF]
Engineering and Technology JournalThe porous silicon (PSi) substrate was accurately synthesized using photoelectrochemical etching. A Nanofilm gallium nitride (GaN) was then precisely deposited on this PSi substrate using pulsed laser deposition (PLD).
Abeer Abbas +4 more
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The Modeling of GaN-FET Power Devices in SPICE
Energies, 2023 This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014.
Janusz Zarębski, Damian Bisewski
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Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
Конденсированные среды и межфазные границы, 2023 In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin +13 more
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Fabrication method of GaN template for high-speed chemical lift-off
AIP Advances, 2023 In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve
Woo Seop Jeong +8 more
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Nanomaterials, 2016 Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation ...
Tae-Hee Kim, Sooseok Choi, Dong-Wha Park
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Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application
IEEE Access, 2019 Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
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Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]
AIP AdvancesThis study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin +3 more
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