Results 41 to 50 of about 856 (145)
Advanced Energy Materials, EarlyView.This work reports 2D MXene‐derived TiN thin films with (111)‐preferred orientation for transparent Ta3N5 photoanodes, demonstrating effective electron transfer behavior. All‐nitride electron‐collection architecture based on MXene‐derived TiN and n‐GaN resolves a long‐standing materials bottleneck between photocarrier transport and light transmission in
Jin Wook Yang +10 more
wiley +1 more source
Carbon Energy, EarlyView.This review reveals how electronic configuration engineering governs the entire electrocatalytic nitrogen cycle, providing structure‐informed insights into reaction selectivity, catalytic durability, and sustainable nitrogen utilization across energy and environmental systems. ABSTRACT The global nitrogen cycle is essential to food production, chemical
Jiamu Feng +7 more
wiley +1 more source
Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications
MicromachinesGallium nitride (GaN)-based materials and devices, as a core representative of third-generation semiconductors, have emerged as a strategic frontier driving modern electronics and optoelectronics revolutions [...]
Wei Liu, Kun Wang
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Doped Ta3N5 Semi‐Transparent Photoanode Enabling Stable Solar Redox Flow Cell Operation
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Synergistic Al:TiO2 underlayer and La doping stabilize semitransparent Ta3N5 photoelectrodes for over 90 h of continuous operation in alkaline solution. The solar redox flow cell demonstrated 12 photocharge–discharge cycles at ∼55% coulombic efficiency using a K4Fe(CN)6|1,5‐DHAQ chemistry. Solar redox flow cells (SRFCs) are photoelectrochemical devices
Filipe Moisés M. Francisco +4 more
wiley +1 more source
Energy Science &Engineering, EarlyView.This graphical abstract illustrates the evolution of wireless electric vehicle charging from unidirectional wireless power transfer to bidirectional wireless power transfer (BWPT) and toward future intelligent, autonomous wireless energy systems.
P. V. Elumalai +6 more
wiley +1 more source
Small Methods, EarlyView.Conventional synthesis of wurtzite gallium nitride (GaN) quantum dots (QDs) demands extreme heat. We overcome this via defect‐driven fragmentation at 50°C. Nitrogen‐rich solvents provide a thermodynamic driving force that promotes the outward movement of internal defects.
Yangpil Jang +6 more
wiley +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
Журнал нано- та електронної фізики, 2013 Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Ashutosh Kumar +4 more
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An Innovative Approach to Multi‐Valued Logic
IEEJ Transactions on Electrical and Electronic Engineering, EarlyView.The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley +1 more source
Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier
MetrologyGaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr +3 more
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Failure mechanisms and electromechanical coupling in semiconducting nanowires
EPJ Web of Conferences, 2010 One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells.
Peng B. +3 more
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