Results 41 to 50 of about 19,006 (214)
2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems
Advanced Materials, EarlyView.A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley +1 more source
Shielding electrostatic fields in polar semiconductor nanostructures
, 2016 Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going optimisation ...
Callsen, G. +3 more
core +1 more source
Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE [PDF]
, 1999 The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma ...
Beach, R. A. +3 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
, 2016 We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant ...
Carlin, Jean-François +8 more
core +2 more sources
Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. [PDF]
, 2015 An advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor white-lighting and visible light communication (VLC). The phosphorous
Chen, Hsiang-Yu +10 more
core +1 more source
Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
Advanced Science, EarlyView.This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
Synthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method [PDF]
Journal of Nanostructures, 2017 Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function.
Mahdi Gholampour, Mahdi Soltanzadeh
doaj +1 more source
Compositionally Graded Indium Gallium Nitride Solar Cells [PDF]
, 2017 For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material.
Matthews, Christopher
core +2 more sources
Phonon transport unveils the prevalent point defects in GaN
, 2017 Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the prevalence of ...
Carrete, Jesús +4 more
core +1 more source