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Micromachines, 2014 This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown.
Vittorio Camarchia +2 more
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Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEuropeThe global energy crisis and environmental challenges necessitate the development of sustainable chemical processes powered by renewable energy sources.
Hyotaik Kang, Chao‐Jun Li
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Stretching magnetism with an electric field in a nitride semiconductor
Nature Communications, 2016 The wurtzite crystal structure of nitride semiconductors results in strong piezoelectricity. Here, the authors also achieve electric-field control of the magnetization of gallium manganese nitride, thus showing that piezoelectric and magnetoelectric ...
D. Sztenkiel +13 more
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Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review
EnergiesThe next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high ...
Daniel Burmester +2 more
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ARO-The Scientific Journal of Koya University, 2016 III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps.
Faten A. Chaqmaqchee
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Lifetime laser damage performance of β-Ga2O3 for high power applications
APL Materials, 2018 Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium ...
Jae-Hyuck Yoo +4 more
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Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]
AIP AdvancesThis study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin +3 more
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Neutron detection using boron gallium nitride semiconductor material
APL Materials, 2014 In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter.
Katsuhiro Atsumi +4 more
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APL Photonics, 2017 We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant ...
Mohamed Sabry Mohamed +8 more
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Measurement: SensorsThis study aims to explore the application of gallium nitride (GaN) barrier in hardware optimization of micro nano scale electromechanical systems (MEMS), particularly its ability to overcome the limitations of traditional hardware in high-temperature ...
Ji Gu
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