Results 1 to 10 of about 34,551 (258)
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication [PDF]
Micromachines, 2023 In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 ...
Yannan Yang +12 more
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Photonics with Gallium Nitride Nanowires. [PDF]
Materials (Basel), 2022 The surface plasmon resonance in low-dimensional semiconducting materials is a source of valuable scientific phenomenon which opens widespread prospects for novel applications. A systematic study to shed light on the propagation of plasmons at the interface of GaN nanowire is reported.
Alwadai N +4 more
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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy [PDF]
Nature CommunicationsGallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high ...
Hong Zhou +25 more
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APL Photonics, 2017 We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant ...
Mohamed Sabry Mohamed +8 more
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Thermal conductivity of wurtzite gallium nitride
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2022 This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity.
V. S. Volcheck +2 more
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Electronics Letters, 2021 Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li +4 more
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The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]
E3S Web of Conferences, 2020 Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
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On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals
Crystals, 2022 The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a ...
Karolina Grabianska +6 more
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Crystals, 2023 Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from ...
Nathan Stoddard, Siddha Pimputkar
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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
AIP Advances, 2021 Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured ...
F. Meier +6 more
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