Results 11 to 20 of about 34,551 (258)

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Thermoelectric properties of Bi-doped Ge0.8Mn0.1Pb0.1Te alloys [PDF]

Shandong kexue
GeTe-based alloys have attracted considerable attention as promising mid-temperature thermoelectric materials owing to their excellent performance. In this study, a series of Ge0.8-xMn0.1Pb0.1BixTe alloys were synthesized by vacuum melting followed by ...
SUN Bing, WANG Qidong, ZHANG Junxiang, MENG Zhenzhen, CHEN Tingting
doaj   +1 more source

Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021
The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride ...
V. S. Volcheck, V. R. Stempitsky
doaj   +1 more source

Study of Elastic properties of Gallium Nitride doped Ferrite-Polypyrrole Nanocomposites [PDF]

EPJ Web of Conferences
The present communication aims to investigate the influence of ferrite substitution in Gallium Nitride and Polypyrrole substitution in Gallium nitride ferrite nano composites. The interpretation was done by studying Infrared spectroscopy.
Indrakanti Rajani, Kiran C. Udaya, Rao V. Brahmaji   +2 more
doaj   +1 more source

Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%

Communications Materials, 2023
Although alpha-voltaic cells have shown great potential in unattended miniaturized systems for compact, long-lifetime and independence of external energy input, the power conversion efficiency of state-of the-art alpha-voltaic cells is still much lower ...
Runlong Gao, Linyue Liu, Xiaochuan Xia, Pengying Wan, Xiao Ouyang, Wuying Ma, Xinlei Geng, Hongyun Wang, Ruiliang Xu, Kexiong Zhang, Hongwei Liang, Xiaoping Ouyang   +11 more
doaj   +1 more source

Observation of 2D-magnesium-intercalated gallium nitride superlattices. [PDF]

Nature
Wang J, Cai W, Lu W, Lu S, Kano E, Agulto VC, Sarkar B, Watanabe H, Ikarashi N, Iwamoto T, Nakajima M, Honda Y, Amano H.   +12 more
europepmc   +2 more sources

Photocatalytic removal of cyclohexane on visible light-driven gallium oxide/carbon nitride composites prepared by impregnation [PDF]

, 2015
Carbon nitride is a material of interest for photocatalytic reactions due to its catalytic and visible light absorption properties. However, its photocatalytic activity is still low.
Lintang, Hendrik O., Shu, Chin Lee, Wee, Shern Chew, Yuliati, Leny   +3 more
core   +2 more sources

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Results in Physics, 2019
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan   +4 more
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Native defects in gallium nitride [PDF]

Physical Review B, 1995
The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms.
, Boguslawski, , Briggs, , Bernholc
openaire   +2 more sources

Unravelling the secrets of the resistance of GaN to strongly ionising radiation

Communications Physics, 2021
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation.
Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz   +11 more
doaj   +1 more source