Results 11 to 20 of about 4,868 (256)

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Thermoelectric properties of Bi-doped Ge0.8Mn0.1Pb0.1Te alloys [PDF]

Shandong kexue
GeTe-based alloys have attracted considerable attention as promising mid-temperature thermoelectric materials owing to their excellent performance. In this study, a series of Ge0.8-xMn0.1Pb0.1BixTe alloys were synthesized by vacuum melting followed by ...
SUN Bing, WANG Qidong, ZHANG Junxiang, MENG Zhenzhen, CHEN Tingting
doaj   +1 more source

Optical nonlinearities of Gallium Nitride [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1997
Luminescence, induced absorption and degenerate four-wave mixing experiments are perform on GaN epilayers grown on a sapphire substrate by MOCVD.We measure the nonlinear behavior of the luminescence spectra near the excitonic resonance, by using an excitation at 4.026 eV from an excimer laser. At low intensities of excitation, spectra show a saturation
H Haag, S Petit, P Gilliot, R Lévy, O Briot, R.L Aulombard   +5 more
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Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021
The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride ...
V. S. Volcheck, V. R. Stempitsky
doaj   +1 more source

Study of Elastic properties of Gallium Nitride doped Ferrite-Polypyrrole Nanocomposites [PDF]

EPJ Web of Conferences
The present communication aims to investigate the influence of ferrite substitution in Gallium Nitride and Polypyrrole substitution in Gallium nitride ferrite nano composites. The interpretation was done by studying Infrared spectroscopy.
Indrakanti Rajani, Kiran C. Udaya, Rao V. Brahmaji   +2 more
doaj   +1 more source

Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%

Communications Materials, 2023
Although alpha-voltaic cells have shown great potential in unattended miniaturized systems for compact, long-lifetime and independence of external energy input, the power conversion efficiency of state-of the-art alpha-voltaic cells is still much lower ...
Runlong Gao, Linyue Liu, Xiaochuan Xia, Pengying Wan, Xiao Ouyang, Wuying Ma, Xinlei Geng, Hongyun Wang, Ruiliang Xu, Kexiong Zhang, Hongwei Liang, Xiaoping Ouyang   +11 more
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Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Results in Physics, 2019
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan   +4 more
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Aluminium and gallium silylimides as nitride sources

Chemistry – A European Journal, 2023
Abstract Terminal aluminium and gallium imides of the type K[(NON)M(NR)], bearing heteroatom substituents at R, have been synthesised via reactions of anionic aluminium(I) and gallium(I) reagents with silyl and boryl azides (NON=4,5‐bis(2,6‐diisopropyl‐anilido)‐2,7‐di‐tert‐butyl‐9,9‐dimethyl‐xanthene).
Andreas Heilmann, Artemis M. Saddington, Jose M. Goicoechea, Simon Aldridge   +3 more
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Unravelling the secrets of the resistance of GaN to strongly ionising radiation

Communications Physics, 2021
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation.
Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz   +11 more
doaj   +1 more source

Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to
V. S. Volcheck, I. Yu. Lovshenko, V. T. Shandarovich, Dao Dinh Ha   +3 more
doaj   +1 more source