Results 41 to 50 of about 4,868 (256)

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies, 2019
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia, Simon Ravyts, Giel Van den Broeck, Johan Driesen   +3 more
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Self‐Assembled Inorganic Nanomembrane Tubes: Rolled‐Up Piezoelectrics for Microacoustic Wave‐Based Actuators and Sensors

Advanced Materials, EarlyView.
This study demonstrates a self‐assembly process to generate free‐standing piezoelectric nanomembranes, forming ultracompact microtubular acoustic wave sensors and actuators. The miniaturized 3D piezoelectric platform reported in this work can be applied in telecommunication, energy harvesting, and acoustofluidics. Moreover, the 3D self‐assembly can add
Raphaël C. L‐M. Doineau, Christian N. Saggau, Stefan Baunack, Thomas Gemming, Yara Abdelaal, Robert Weser, Oliver G. Schmidt, Hagen Schmidt, Andreas Winkler, Mariana Medina‐Sánchez   +9 more
wiley   +1 more source

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics Letters, 2023
This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure.
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto   +8 more
doaj   +1 more source

Gallium Nitride Metalens for Image Decryption

Crystals, 2021
As the demand for secure digital data continues to increase, image encryption and decryption have recently received tremendous attention. The rapid development of ultrathin metasurfaces has mainly been driven by the desire for the introduction of novel ...
Meng-Hsin Chen, Jia-Ying Li, Vin-Cent Su
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

GaN Nanopowder synthesis via nitridation: Fabrication and characterization of GaN thin Films for UV detection applications

Sensors International
This study presents a novel method for synthesizing gallium nitride nanoparticles via nitridation and their subsequent deposition onto silicon substrates using electron beam evaporation for UV detection applications. The structural and optical properties
Mahdi Hajimazdarani, Peyman Yaghoubizadeh, Ali Jafari, Ali Kenarsari Moghadam, Mojtaba Hajimazdarani, Mohammad Javad Eshraghi   +5 more
doaj   +1 more source

Cathodoluminescence spectra of gallium nitride nanorods [PDF]

Nanoscale Research Letters, 2011
Abstract Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed.
Tsai, Chia-Chang, Li, Guan-Hua, Lin, Yuan-Ting, Chang, Ching-Wen, Wadekar, Paritosh, Chen, Quark, Rigutti, Lorenzo, Tchernycheva, Maria, Julien, François, Tu, Li-Wei   +9 more
openaire   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Advances in Magnesium‐Based Thermoelectrics: A Critical Review

Advanced Materials, EarlyView.
Magnesium‐based thermoelectric materials have emerged as promising candidates for low‐to‐mid‐temperature energy conversion due to their abundance, low cost, and competitive performance. This review summarizes recent advances in Mg3X2, MgAgSb, and Mg2X systems, covering transport mechanisms, fabrication strategies, stability challenges, and device ...
Li‐Min Zhang, Li Zhang, Nan‐Hai Li, Yan‐Ling Yang, Xiao‐Lei Shi, Zhi‐Gang Chen   +5 more
wiley   +1 more source