Results 61 to 70 of about 4,868 (256)

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Reconnaissance Peptide Labeling Grain Boundary of Chemically Grown MoS2 Polycrystalline Monolayer

Advanced Materials Technologies, EarlyView.
Self‐assembled peptides on substrates, through adsorption and aggregation, offer an alternative way to label grain boundaries in chemically grown single‐layer polycrystalline MoS2. During an early nucleation step, peptides preferentially bind to grain boundaries.
Linhao Sun, Jinhua Hu
wiley   +1 more source

Stretching magnetism with an electric field in a nitride semiconductor

Nature Communications, 2016
The wurtzite crystal structure of nitride semiconductors results in strong piezoelectricity. Here, the authors also achieve electric-field control of the magnetization of gallium manganese nitride, thus showing that piezoelectric and magnetoelectric ...
D. Sztenkiel, M. Foltyn, G. P. Mazur, R. Adhikari, K. Kosiel, K. Gas, M. Zgirski, R. Kruszka, R. Jakiela, Tian Li, A. Piotrowska, A. Bonanni, M. Sawicki, T. Dietl   +13 more
doaj   +1 more source

Solid Particle‐Liquid Metal Mixtures for Robust High‐Current Interconnects in Stretchable Electronics and Soft Robotics

Advanced Materials Technologies, EarlyView.
Metallic microparticles dispersed in liquid metal interconnects mitigate electromigration‐induced failure by reconfiguring internal current density distributions. These fillers facilitate the growth of a robust, protective gallium oxide shell at elevated temperatures, shifting the failure threshold toward a thermal limit.
Ethan J. Krings, Calan Brant, Carson Emeigh, Donovan Vincent Jr., Ravi Tutika, Sangjin Ryu, Eric J. Markvicka   +6 more
wiley   +1 more source

Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review

Energies
The next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high ...
Daniel Burmester, Ramesh Rayudu, Alan Brent   +2 more
doaj   +1 more source

Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

ARO-The Scientific Journal of Koya University, 2016
III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps.
Faten A. Chaqmaqchee
doaj   +1 more source

Spacer‐Less Substrate‐Integrated Metasurface for Near‐Unity Terahertz Absorption

Advanced Optical Materials, EarlyView.
ABSTRACT Although conventional metal‐insulator‐metal (MIM) terahertz (THz) absorbers can provide near‐unity absorption, their multilayer stacks inevitably introduce additional thickness, mass, and residual stress, which limit their compatibility with THz thermal sensing platforms.
Zihao Zhao, Kazuho Harada, Qian Liu, Isao Morohashi, Xu Fang, Kazuhiko Hirakawa, Ya Zhang   +6 more
wiley   +1 more source

Advances in Electroactive Liquid Crystal Elastomers for Intelligent Robotics and Electronics

Advanced Robotics Research, EarlyView.
Electroactive liquid crystal elastomers (eLCEs) integrate molecular anisotropy with electrical functionality to enable programmable actuation and reconfigurable electronics. This review classifies eLCEs into robotic actuators and adaptive electronics, summarizes key actuation mechanisms, and highlights fabrication strategies that bridge materials to ...
Kavita Ramesh Rathod, Sena Chon, Jae Hyuk Hwang, Sung Hyuk Park, Woohwa Lee, Joonmyung Choi, Shi Hyeong Kim, Seung Hwan Ko, Changsoon Choi, Seon Jeong Kim, Dong‐Gyun Kim, Habeom Lee, Kyung Gook Cho, Woon‐Hong Yeo, Hyun Kim   +14 more
wiley   +1 more source

Lifetime laser damage performance of β-Ga2O3 for high power applications

APL Materials, 2018
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium ...
Jae-Hyuck Yoo, Subrina Rafique, Andrew Lange, Hongping Zhao, Selim Elhadj   +4 more
doaj   +1 more source

Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]

AIP Advances
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin, O. Tanriverdi, B. Karahan, F. Yasar   +3 more
doaj   +1 more source