Results 81 to 90 of about 4,868 (256)

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee   +9 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

open access: yesAdvanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh   +8 more
wiley   +1 more source

Colossal Photovoltaic Current in Ferroelectric Oxide by Constructing Defect Band

open access: yesAdvanced Science, EarlyView.
Colossal photovoltaic current density of 34.36 mA/cm2 under 375 nm illumination has been achieved in the Pb‐deficient PbTiO3 film. The ultraviolet photoresponsivity surpasses that of all reported ferroelectric materials. This enhancement is attributed to the junction effect between the Pb‐deficient and non‐defective layers.
Yiran Sun   +16 more
wiley   +1 more source

Failure mechanisms and electromechanical coupling in semiconducting nanowires

open access: yesEPJ Web of Conferences, 2010
One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells.
Peng B.   +3 more
doaj   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

open access: yesAdvanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim   +7 more
wiley   +1 more source

Plasma-chemical etching of gallium nitride epitaxial structures

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift.
A. G. Borisenko   +5 more
doaj  

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

Fabrication of Composite Cathode for All‐Solid‐State Sodium Batteries

open access: yesAdvanced Energy Materials, EarlyView.
The design of composite cathodes for all‐solid‐state sodium batteries must address three critical challenges—interfacial side reactions, interfacial delamination, and highly tortuous transport pathways. This work outlines structural and interfacial strategies to optimize ion transport and mechanical stability, enabling durable, and high‐performance ...
Gaoming Sun   +6 more
wiley   +1 more source

Magneto-Reflectivity of Gallium Nitride Epilayers

open access: yesphysica status solidi (b), 1999
We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magneto-excitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges ...
Shields, P   +3 more
openaire   +2 more sources

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