Results 51 to 60 of about 4,925 (263)

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies, 2019
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia, Simon Ravyts, Giel Van den Broeck, Johan Driesen   +3 more
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics Letters, 2023
This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure.
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto   +8 more
doaj   +1 more source

From Behavior to Dynamics: Decoding Carrier Roles in Cu‐based Photocathodes for Solar‐Driven CO2 Reduction

Advanced Materials, EarlyView.
The performance of Cu‐based photocathodes in photoelectrochemical CO2 reduction is not governed by catalytic sites alone, but by the dynamic journey of photogenerated carriers. This review decodes how carrier generation, recombination, transport, accumulation, extraction, and electrolyte coupling shape catalytic activity, selectivity, and stability ...
Yi‐Cheng Wang, Chenyu Xu, Peng‐Fei Sui, Yi Liu, Xiaolei Wang, Jing‐Li Luo   +5 more
wiley   +1 more source

GaN Nanopowder synthesis via nitridation: Fabrication and characterization of GaN thin Films for UV detection applications

Sensors International
This study presents a novel method for synthesizing gallium nitride nanoparticles via nitridation and their subsequent deposition onto silicon substrates using electron beam evaporation for UV detection applications. The structural and optical properties
Mahdi Hajimazdarani, Peyman Yaghoubizadeh, Ali Jafari, Ali Kenarsari Moghadam, Mojtaba Hajimazdarani, Mohammad Javad Eshraghi   +5 more
doaj   +1 more source

Cathodoluminescence spectra of gallium nitride nanorods [PDF]

Nanoscale Research Letters, 2011
Abstract Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed.
Tsai, Chia-Chang, Li, Guan-Hua, Lin, Yuan-Ting, Chang, Ching-Wen, Wadekar, Paritosh, Chen, Quark, Rigutti, Lorenzo, Tchernycheva, Maria, Julien, François, Tu, Li-Wei   +9 more
openaire   +2 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

An Ultra‐Reliable and Highly Sensitive Flexible Piezoelectric Pressure Sensor Based on Vertically Aligned Gallium Nitride Microrod Arrays on Graphene

Advanced Materials Interfaces, EarlyView.
A flexible and highly reliable piezoelectric pressure sensor based on GaN p–n homojunction microrod arrays on graphene is demonstrated. The sensor exhibits high sensitivity, rapid response, excellent cyclic durability, and stable performance after thermal aging and PBS immersion, highlighting its potential for harsh‐environment and biomedical pressure ...
Asad Ali, Han Ik Kim, Seokje Lee, Imhwan Kim, Hongseok Oh, Gyu‐Chul Yi   +5 more
wiley   +1 more source