Results 51 to 60 of about 5,067 (191)
Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEuropeThe global energy crisis and environmental challenges necessitate the development of sustainable chemical processes powered by renewable energy sources.
Hyotaik Kang, Chao‐Jun Li
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Micromachines, 2014 This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown.
Vittorio Camarchia +2 more
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Continuous‐Flow Microfluidic Synthesis Enhances C2+ Selectivity for Cu2O Catalysts
Advanced Science, EarlyView.Microfluidic devices are used to prepare Cu2O nanoparticles under laminar flow conditions, which exhibit enhanced selectivity in the CO2‐to‐C2+ reaction due to their nanoporosity and high defect concentration. Cu2O prepared using standard solution methods displays decreased CO2‐to‐C2+ selectivity due to the absence of similar properties. Altogether, we
Carlota Casas +16 more
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(Fe4N/GaN)@GC: A Bifunctional Electrocatalyst for High‐Performance Rechargeable Zinc‐Air Batteries
Advanced Science, EarlyView.This work demonstrates that an unprecedented Fe4N/GaN heterostructure, stabilized by a graphitized carbon shell, induces interfacial charge redistribution and optimizes oxygen‐intermediate adsorption, enabling highly efficient bifunctional ORR/OER electrocatalysis for rechargeable zinc‐air batteries.
Xin‐Yuan Wei +8 more
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Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
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Stretching magnetism with an electric field in a nitride semiconductor
Nature Communications, 2016 The wurtzite crystal structure of nitride semiconductors results in strong piezoelectricity. Here, the authors also achieve electric-field control of the magnetization of gallium manganese nitride, thus showing that piezoelectric and magnetoelectric ...
D. Sztenkiel +13 more
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Advanced Science, EarlyView.Asymmetric single‐atom metal‐nitrogen‐carbon catalysts modulate the non‐radical pathway during peroxymonosulfate (PMS) activation. A fundamental contrast was revealed between diffusible singlet oxygen (1O2) and non‐diffusible electron‐transfer pathways (ETP) in antibiotic resistance gene (ARG) degradation.
Chen Gao +6 more
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Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review
EnergiesThe next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high ...
Daniel Burmester +2 more
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Lifetime laser damage performance of β-Ga2O3 for high power applications
APL Materials, 2018 Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium ...
Jae-Hyuck Yoo +4 more
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ARO-The Scientific Journal of Koya University, 2016 III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps.
Faten A. Chaqmaqchee
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