Results 31 to 40 of about 34,551 (258)

A Low-Cost and Compact High-Frequency Gallium Nitride Gradient Power Amplifier for Low-Field MRI. [PDF]

Magn Reson Med
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
Bolding NR, Hannan J, Vaughn C, Patel A, Lin S, Sun JEP, Grissom W, Griswold MA.   +7 more
europepmc   +2 more sources

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

, 2015
Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low ...
Amirthapandian, S., Dhara, S., Madapu, Kishore K., Polaki, S., Tyagi, A. K.   +4 more
core   +2 more sources

Tubular structures of GaS [PDF]

, 2004
In this Brief Report we demonstrate, using density-functional tight-binding theory, that gallium sulfide (GaS) tubular nanostructures are stable and energetically viable.
A.N. MacInnes, A.N. MacInnes, A.N. MacInnes, B.W. Smith, D. Porezag, E. Hernandez, E.T. Mickelson, G. Seifert, G. Seifert, G. Seifert, G. Seifert, G. Seifert, G. Seifert, G.G. Tibbets, J.A. Hollingsworth, J.L. Brebner, L. Scheffer, M. Cote, M. Nath, M. Terrones, M.E. Spahr, M.S. Dresselhaus, R. Tenne, S. Iijima, Th. Frauenheim, Th. Frauenheim, Th. Köhler, W. Han, Y. Li, Z. Hajnal   +29 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Compositionally Graded Indium Gallium Nitride Solar Cells [PDF]

, 2017
For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material.
Matthews, Christopher
core   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Shielding electrostatic fields in polar semiconductor nanostructures

, 2016
Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going optimisation ...
Callsen, G., Hoffmann, A., Hönig, G. M. O., Westerkamp, S.   +3 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit

Фізика і хімія твердого тіла, 2018
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk, S. P. Novosiadlyi, V. І. Mandzyuk, І. Z. Huk   +3 more
doaj   +1 more source

Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Journal of Low Power Electronics and Applications, 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
doaj   +1 more source