Results 21 to 30 of about 34,551 (258)
Optical nonlinearities of Gallium Nitride [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1997 Luminescence, induced absorption and degenerate four-wave mixing experiments are perform on GaN epilayers grown on a sapphire substrate by MOCVD.We measure the nonlinear behavior of the luminescence spectra near the excitonic resonance, by using an excitation at 4.026 eV from an excimer laser. At low intensities of excitation, spectra show a saturation
H Haag +5 more
openaire +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to
V. S. Volcheck +3 more
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Numerical Simulation of Orthogonal Machining of Gallium Nitride via Smoothed Particle Hydrodynamics
NUML International Journal of Engineering and Computing, 2022 Gallium Nitride is one of the best candidates for upcoming industrial revolution due to its superior electrical properties over silicon. In the present work, we investigate the chip formation, cutting force and effective stress in diamond machining of ...
Muhammad Haseeb +2 more
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A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
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Electronic Materials with Wide Band Gap: Recent Developments [PDF]
, 2014 The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II.
Klimm, D.
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The self-heating effect exerts a considerable influence on the characteristics of high-power electronic and optoelectronic devices based on gallium nitride.
V. S. Volcheck, V. R. Stempitsky
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Crystals, 2018 Transferable, low-stress gallium nitride grown on graphene for flexible lighting or display applications may enable next-generation optoelectronic devices. However, the growth of gallium nitride on graphene is challenging.
Han Yan +4 more
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, 2012 This paper presents the preliminary results of optical characterization using spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin films with medium indium content (0 ...
McLaughlin, D. V. P., Pearce, Joshua M.
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Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
Energies, 2023 High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced,
Salvatore Musumeci, Vincenzo Barba
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Indium Nitride and Indium Gallium Nitride layers grown on nanorods [PDF]
, 2013 Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array.
Cherns, David +6 more
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