Results 61 to 70 of about 2,749 (180)

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Micromachines, 2016
Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3 . 4 e V . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent ...
Yucheng Lan, Jianye Li, Winnie Wong-Ng, Rola M. Derbeshi, Jiang Li, Abdellah Lisfi   +5 more
doaj   +1 more source

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2021
Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R.   +12 more
europepmc   +1 more source

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery

Nanomaterials
Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial.
Jiachen Zhang, Kunlun Lv, Yuan Yin, Yuqian Gao, Ye Tian, Yuncheng Han, Jun Tang   +6 more
doaj   +1 more source

Ammonolysis of gallium phosphide GaP to the nanocrystalline wide bandgap semiconductor gallium nitride GaN

RSC Advances, 2015
Ammonolysis of microcrystalline powders of gallium phosphide GaP afforded nanopowders or nanowires of hexagonal gallium nitride GaN.
Mariusz Drygas, Maciej Sitarz, Jerzy F. Janik   +2 more
openaire   +1 more source

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigate the field and temperature dependence of the electron mobility in aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) realized on GaN-on-silicon (Si) substrates.
Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting   +2 more
doaj   +1 more source

MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation

Applied Physics Express
This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process.
Reet Chaudhuri, Kyle Bothe, Antonio Lucero, Austin Hickman, Shankar Miller-Murthy, Debdeep Jena, Huili Grace Xing, Ko-Tao Lee   +7 more
doaj   +1 more source

Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications

Crystals, 2019
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy.
Yu-Li Hsieh, Wen-Shao Chen, Liann-Be Chang, Lee Chow, Samuel Borges, Alfons Schulte, Shiang-Fu Huang, Ming-Jer Jeng, Chih-Jen Yu   +8 more
doaj   +1 more source

Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz. [PDF]

Data Brief, 2020
Roy B, Wu MH, Vlahovic B.
europepmc   +1 more source

Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon

Results in Engineering
The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C.
D. Tepatzi-Xahuentitla, D. Cortes-Salinas, D.A. Granada-Ramírez, Y. Panecatl Bernal, M. Pérez-González, S.A. Tomás, A.A. Durán-Ledezma, Salvador Alcantara-Iniesta, M.L. Gómez-Herrera, J.G. Mendoza-Alvarez, J. Alvarado   +10 more
doaj   +1 more source

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. [PDF]

Micromachines (Basel), 2020
Lin YC, Chen SH, Lee PH, Lai KH, Huang TJ, Chang EY, Hsu HT.   +6 more
europepmc   +1 more source