Results 61 to 70 of about 856 (145)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

An Ultra‐Reliable and Highly Sensitive Flexible Piezoelectric Pressure Sensor Based on Vertically Aligned Gallium Nitride Microrod Arrays on Graphene

Advanced Materials Interfaces, Volume 13, Issue 15, 4 August 2026.
A flexible and highly reliable piezoelectric pressure sensor based on GaN p–n homojunction microrod arrays on graphene is demonstrated. The sensor exhibits high sensitivity, rapid response, excellent cyclic durability, and stable performance after thermal aging and PBS immersion, highlighting its potential for harsh‐environment and biomedical pressure ...
Asad Ali, Han Ik Kim, Seokje Lee, Imhwan Kim, Hongseok Oh, Gyu‐Chul Yi   +5 more
wiley   +1 more source

Tuning the Electronic Structure and Photocatalytic Properties in Polar Two‐Dimensional Gallium Oxide Through Interlayer Stacking and Sulfur Doping

Electron, Volume 4, Issue 3, August 2026.
This work demonstrates that site‐selective sulfur doping effectively narrows the bandgap of polar 2D Ga2O3 monolayer while preserving the built‐in electric field, enabling efficient carrier separation and enhanced visible‐light absorption for photocatalytic water splitting.
Qi Li, Na Lin, Junlei Zhao, Hao Zhao, Bowen Yu, Yufang Xing, Na Zhang, Jian Zhang, Xiufeng Cheng, Zhitai Jia, Xian Zhao   +10 more
wiley   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Self‐Powered ZnSnN2/GaN Photodiodes via Fine Stoichiometry Control and Photon Trapping Micropatterned Heterojunctions Under Low‐Light Irradiation

Small Structures, Volume 7, Issue 8, August 2026.
We demonstrate a high performance self‐powered photodiode based on a ZnSnN2/GaN heterostructure. Through precise stoichiometric control, we enhanced the built‐in electric field for efficient charge separation. Additionally, light‐trapping micropatterned heterojunctions significantly improved light absorption and carrier lifetime.
Jeong Hyeon Kim, Ju Chan Hwang, Soon Joo Yoon, Yoon Kyueng Lee, Taehun Lee, Jungwook Min, Jongmin Kim, Kwangwook Park, Haneol Lee   +8 more
wiley   +1 more source

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigate the field and temperature dependence of the electron mobility in aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) realized on GaN-on-silicon (Si) substrates.
Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting   +2 more
doaj   +1 more source

Influence of Backside Surface and Subsurface Damage in Gallium Nitride Wafers on Facet Quality and Violet‐Emitting Laser Diode Performance

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
Backside thinning techniques critically influence GaN laser performance. Compared to lapping, grinding reduces subsurface damage depth fivefold and lowers wafer bow, while mechanical polishing eliminates subsurface damage entirely. These improvements directly translate to smoother cleaved facets and a nearly 40% reduction in laser threshold current ...
S. Makhladi, J. Enslin, C. Netzel, E. Freier, M. Guttmann, M. Friedler, S. Einfeldt   +6 more
wiley   +1 more source

MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation

Applied Physics Express
This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process.
Reet Chaudhuri, Kyle Bothe, Antonio Lucero, Austin Hickman, Shankar Miller-Murthy, Debdeep Jena, Huili Grace Xing, Ko-Tao Lee   +7 more
doaj   +1 more source

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery

Nanomaterials
Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial.
Jiachen Zhang, Kunlun Lv, Yuan Yin, Yuqian Gao, Ye Tian, Yuncheng Han, Jun Tang   +6 more
doaj   +1 more source

Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications

Crystals, 2019
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy.
Yu-Li Hsieh, Wen-Shao Chen, Liann-Be Chang, Lee Chow, Samuel Borges, Alfons Schulte, Shiang-Fu Huang, Ming-Jer Jeng, Chih-Jen Yu   +8 more
doaj   +1 more source