, 2016 Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core
Equations for filling factor estimation in opal matrix
, 2005 We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell ...
Abrarov +34 more
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Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature [PDF]
Journal of Optoelectronical Nanostructures, 2018 Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C).
Mahdi Gholampour +4 more
doaj
III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
机车电传动, 2023 Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran +3 more
doaj
Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review
Micromachines, 2016 Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3 . 4 e V . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent ...
Yucheng Lan +5 more
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Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1). [PDF]
Materials (Basel), 2022 Drygas M +4 more
europepmc +1 more source
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. [PDF]
Nanomaterials (Basel), 2021 Schilirò E +12 more
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Magnetic studies of GaN nanoceramics
, 2006 The synthesis, morphology and magnetization measurements of GaN nanoceramics obtained under high pressure are reported. In particular the effect of grain size on magnetic properties of GaN nanopowders and nanoceramics was investigated.
Nyk, M., Strek, W., Zaleski, A. J.
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Applied Physics ExpressThis work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process.
Reet Chaudhuri +7 more
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Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
, 2019 Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing.
Fedyanin, Dmitry Yu., Khramtsov, Igor A.
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