Results 91 to 100 of about 19,006 (214)

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery

Nanomaterials
Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial.
Jiachen Zhang, Kunlun Lv, Yuan Yin, Yuqian Gao, Ye Tian, Yuncheng Han, Jun Tang   +6 more
doaj   +1 more source

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigate the field and temperature dependence of the electron mobility in aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) realized on GaN-on-silicon (Si) substrates.
Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting   +2 more
doaj   +1 more source

Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications

Crystals, 2019
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy.
Yu-Li Hsieh, Wen-Shao Chen, Liann-Be Chang, Lee Chow, Samuel Borges, Alfons Schulte, Shiang-Fu Huang, Ming-Jer Jeng, Chih-Jen Yu   +8 more
doaj   +1 more source

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review. [PDF]

Sensors (Basel), 2020
Khan MAH, Rao MV.
europepmc   +1 more source

The Electrical Properties of Al, ga1-Xn Thin Films Deposited on Si(111) Substrate by Chemical Solution Deposition Method [PDF]

AlxGa1-xN thin films with the GaN buffer layer was deposited on Si(111) substrate by chemical solution deposition (CSD) method. The objective of this research was to evaluate the electrical properties of AlxGa1-xN with variation of Al mole fraction ...
Hadiyanto, Hadiyanto, Istadi, I., Nurhasanah, Iis, Sutanto, Heri   +3 more
core  

Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz. [PDF]

Data Brief, 2020
Roy B, Wu MH, Vlahovic B.
europepmc   +1 more source

Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon

Results in Engineering
The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C.
D. Tepatzi-Xahuentitla, D. Cortes-Salinas, D.A. Granada-Ramírez, Y. Panecatl Bernal, M. Pérez-González, S.A. Tomás, A.A. Durán-Ledezma, Salvador Alcantara-Iniesta, M.L. Gómez-Herrera, J.G. Mendoza-Alvarez, J. Alvarado   +10 more
doaj   +1 more source

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. [PDF]

Micromachines (Basel), 2020
Lin YC, Chen SH, Lee PH, Lai KH, Huang TJ, Chang EY, Hsu HT.   +6 more
europepmc   +1 more source

Room Temperature Gas Sensor Based on GaN/PANI Micro Composite with Ultrahigh NH3 Gas Sensibility

Taiyuan Ligong Daxue xuebao
[Purposes] This study is carriedout to discuss on the response of gallium nitride (GaN) and polyaniline (PANI) composites to ammonia (NH3) at room temperature.
LIU Xiaoru, JIA Zhengyang, GUANG Juxu, HAN Dan, SANG Shengbo   +4 more
doaj   +1 more source

Heavy electron doping in monolayer MoS2 on a freestanding N-face GaN substrate

Applied Physics Express
This study explores how gallium nitride (GaN) surface polarity affects the optical properties and surface potential of MoS _2 . Using Raman spectroscopy, photoluminescence, and Kelvin force microscopy (KFM), significant electron doping (∼10 ^14 cm ^−2 ...
Kaipeng Rong, Keisuke Shinokita, Peishan Yu, Takahiko Endo, Tsutomu Araki, Yasumitsu Miyata, Kazunari Matsuda, Shinichiro Mouri   +7 more
doaj   +1 more source