Results 91 to 100 of about 2,749 (180)

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Thermal Stability of Thin Metal Films on GaN Surfaces: Morphology and Nanostructuring. [PDF]

Nanomaterials (Basel)
Stafiniak A, Macherzyński W, Szyszka A, Szymon R, Wośko M, Paszkiewicz R.   +5 more
europepmc   +1 more source

Femtosecond Laser-Written Nanoablations Containing Bright Antibunched Emitters on Gallium Nitride. [PDF]

ACS Photonics
Guo Y, Coccia G, Bharadwaj V, Yoshizaki R, Eggleton KM, Hadden JP, Eaton SM, Bennett AJ.   +7 more
europepmc   +1 more source

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]

Nanomaterials (Basel)
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source

Unveiling GaN Prismatic Edge Dislocations at the Atomic Scale via P-N Theory Combined with DFT. [PDF]

Materials (Basel)
Peng L, Huang L, Chen S, Huang C, Wang R, Li M.   +5 more
europepmc   +1 more source

High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. [PDF]

Nanomaterials (Basel)
Li S, Wu M, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +7 more
europepmc   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source