Results 71 to 80 of about 19,006 (214)
Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN
Elektronika ir Elektrotechnika, 2019 This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN).
Marek Suproniuk +5 more
doaj +1 more source
, 2010 Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion.
Bentley W. A. +4 more
core +1 more source
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.Conventional Ga‐polar aluminum gallium nitride (AlGaN) deep‐ultraviolet (UV) light‐emitting diodes (LEDs) suffer from polarization‐induced carrier separation and severe electron leakage, which limit device efficiency. In this regard, we present an N‐polar AlGaN‐based UV LED integrating a band‐engineered active region designed to overcome the ...
Swetha Velpula +3 more
wiley +1 more source
Growth of single-crystal gallium nitride [PDF]
, 1970 Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Failure mechanisms and electromechanical coupling in semiconducting nanowires
EPJ Web of Conferences, 2010 One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells.
Peng B. +3 more
doaj +1 more source
GaN Mid‐IR Plasmonics: Low‐Loss Epsilon‐Near‐Zero Modes
Advanced Optical Materials, Volume 14, Issue 16, 24 April 2026.This work reports the first comprehensive experimental study of heavily doped GaN as an epsilon‐near‐zero (ENZ) material, including the demonstration of a plasmonic ENZ mode in GaN thin films on Si, and establishes GaN as a viable platform for mid‐IR ENZ‐based plasmonics. ATR measurements and TMM modelling enable detailed analysis of the hybrid surface
Julia Inglés‐Cerrillo +5 more
wiley +1 more source
Theory of Doping and Defects in III-V Nitrides
, 1998 Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon and oxygen ...
Neugebauer, Joerg +2 more
core +2 more sources
New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN-Titanium Nitride TiN. [PDF]
Materials (Basel), 2021 Drygaś M +6 more
europepmc +1 more source
Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN
, 2017 We report on thermal transport properties of wurtzite GaN in the presence of dislocations, by using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration were analyzed and found to reduce considerably the thermal ...
Belabbas, Imad +5 more
core +3 more sources