Results 71 to 80 of about 2,749 (180)

Room Temperature Gas Sensor Based on GaN/PANI Micro Composite with Ultrahigh NH3 Gas Sensibility

Taiyuan Ligong Daxue xuebao
[Purposes] This study is carriedout to discuss on the response of gallium nitride (GaN) and polyaniline (PANI) composites to ammonia (NH3) at room temperature.
LIU Xiaoru, JIA Zhengyang, GUANG Juxu, HAN Dan, SANG Shengbo   +4 more
doaj   +1 more source

Heavy electron doping in monolayer MoS2 on a freestanding N-face GaN substrate

Applied Physics Express
This study explores how gallium nitride (GaN) surface polarity affects the optical properties and surface potential of MoS _2 . Using Raman spectroscopy, photoluminescence, and Kelvin force microscopy (KFM), significant electron doping (∼10 ^14 cm ^−2 ...
Kaipeng Rong, Keisuke Shinokita, Peishan Yu, Takahiko Endo, Tsutomu Araki, Yasumitsu Miyata, Kazunari Matsuda, Shinichiro Mouri   +7 more
doaj   +1 more source

Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics

Molecules
As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in ...
Yi Peng, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, Wenhong Sun   +9 more
doaj   +1 more source

Understanding the adsorption performance of T-G, T-BN, T-AlN, and T-GaN nanosheets toward the thioguanine anticancer drug via DFT calculations

AIP Advances
In this study, the sensitivity and reactivity of the T-graphene (T-G), T-boron nitride (T-BN), T-aluminum nitride (T-AlN), and T-gallium nitride (T-GaN) as carriers for thioguanine (Tg) anticancer drug have been explored using DFT simulations.
Md Najmus Sakib, Tanvir Ahmed, Md Adam Shafiulla, Dr. Farzana Afroj, Afiya Akter Piya, Siraj Ud Daula Shamim   +5 more
doaj   +1 more source

Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

Acta Polytechnica, 2006
We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering onsilicon, quartz and Corning glass substrates.
V. Prajzler, Z. Burian, I. Hüttel, J. Špirková, J. Hamáček, J. Oswald, J. Zavadil, V. Peřina   +7 more
doaj  

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

Small
Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
europepmc   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

Experimental Investigation into the Reactions Between Liquid Gallium and Inorganic Nitrogen Precursors (N₂, NH₃, and NH₄Cl) at 400-500 °C. [PDF]

Materials (Basel)
Zheng Y, Guan X.
europepmc   +1 more source

Polyethyleneimine-Directed In Situ Gold Deposition on Gallium Nitride Nanoparticles for Enhanced Electrochemical Detection of Erythromycin. [PDF]

Int J Mol Sci
Carp OE, Bostiog DI, Ursu EL, Mocanu RG, Marangoci NL, Tiginyanu I, Rotaru A.   +6 more
europepmc   +1 more source