Results 71 to 80 of about 856 (145)

Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon

Results in Engineering
The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C.
D. Tepatzi-Xahuentitla, D. Cortes-Salinas, D.A. Granada-Ramírez, Y. Panecatl Bernal, M. Pérez-González, S.A. Tomás, A.A. Durán-Ledezma, Salvador Alcantara-Iniesta, M.L. Gómez-Herrera, J.G. Mendoza-Alvarez, J. Alvarado   +10 more
doaj   +1 more source

Room Temperature Gas Sensor Based on GaN/PANI Micro Composite with Ultrahigh NH3 Gas Sensibility

Taiyuan Ligong Daxue xuebao
[Purposes] This study is carriedout to discuss on the response of gallium nitride (GaN) and polyaniline (PANI) composites to ammonia (NH3) at room temperature.
LIU Xiaoru, JIA Zhengyang, GUANG Juxu, HAN Dan, SANG Shengbo   +4 more
doaj   +1 more source

Heavy electron doping in monolayer MoS2 on a freestanding N-face GaN substrate

Applied Physics Express
This study explores how gallium nitride (GaN) surface polarity affects the optical properties and surface potential of MoS _2 . Using Raman spectroscopy, photoluminescence, and Kelvin force microscopy (KFM), significant electron doping (∼10 ^14 cm ^−2 ...
Kaipeng Rong, Keisuke Shinokita, Peishan Yu, Takahiko Endo, Tsutomu Araki, Yasumitsu Miyata, Kazunari Matsuda, Shinichiro Mouri   +7 more
doaj   +1 more source

Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics

Molecules
As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in ...
Yi Peng, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, Wenhong Sun   +9 more
doaj   +1 more source

Understanding the adsorption performance of T-G, T-BN, T-AlN, and T-GaN nanosheets toward the thioguanine anticancer drug via DFT calculations

AIP Advances
In this study, the sensitivity and reactivity of the T-graphene (T-G), T-boron nitride (T-BN), T-aluminum nitride (T-AlN), and T-gallium nitride (T-GaN) as carriers for thioguanine (Tg) anticancer drug have been explored using DFT simulations.
Md Najmus Sakib, Tanvir Ahmed, Md Adam Shafiulla, Dr. Farzana Afroj, Afiya Akter Piya, Siraj Ud Daula Shamim   +5 more
doaj   +1 more source

Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

Acta Polytechnica, 2006
We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering onsilicon, quartz and Corning glass substrates.
V. Prajzler, Z. Burian, I. Hüttel, J. Špirková, J. Hamáček, J. Oswald, J. Zavadil, V. Peřina   +7 more
doaj  

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V)

Scientific Reports
This work demonstrates, for the first time, the three-dimensional monolithic integration of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) directly on gallium nitride (GaN) high electron mobility transistors (HEMTs) in a ...
Tian-Li Wu, Hsin-Jou Ho, Chia-Wei Liu, Shivendra Kumar Singh, Yi-Chen Chen, Hsin-Wei Chen   +5 more
doaj   +1 more source

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Vertical Gallium Nitride (GaN) Transistors For Extreme Environments

University of the District of Columbia Engineering Department Seminar November 19, 2021 virtual, 2021
openaire   +2 more sources

Reflection coefficient and optical conductivity of gallium nitride GaN [PDF]

Semiconductor Physics Quantum Electronics and Optoelectronics, 2012
openaire   +1 more source