Results 51 to 60 of about 19,006 (214)

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

Advanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang, Zhen‐Hui Qin, Yi‐Han He, Yun‐Fei Cheng, Hao Yan, Si‐Yuan Yu, Ming‐Hui Lu, Yan‐Feng Chen   +7 more
wiley   +1 more source

One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

, 2017
GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for ...
Barick, B. K., Dhar, S., Yadav, Shivesh
core   +1 more source

Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion

Advanced Science, EarlyView.
This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv, Runchao Qin, Jianshuo Chen, Kaiwen Yang, Jianwei Lu, Weiwei Lei, Yifu Yu   +6 more
wiley   +1 more source

AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment

, 2019
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable.
Hatui, Nirupam, Jang, Raina, Keller, Stacia, Koksaldi, Onur, Krishna, Athith, Mishra, Umesh, Raj, Aditya   +6 more
core   +1 more source

Indium Nitride and Indium Gallium Nitride layers grown on nanorods [PDF]

, 2013
Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array.
Cherns, David, Fischer, Alec M., Foxon, C. Thomas, Goff, Lucy E., Novikov, Sergei V., Ponce, Fernando A., Webster, Richard F   +6 more
core   +2 more sources

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate

International Journal of Electrochemical Science, 2014
Gallium nitride (GaN) films have been grown on the sapphire substrate with and without carbon- nanotubes (CNTs). The stripy defects distribution of the GaN film on the CNTs patterned sapphire substrate (CPSS) coincides with the morphology of the CNTs ...
Mingsheng Xu, Yang Wei, Shuang Qu, Chengxin Wang, Xiaobo Hu, Xiangang Xu   +5 more
doaj   +1 more source

Temperature stability of intersubband transitions in AlN/GaN quantum wells

, 2010
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons.
Andersson, Thorvald G., Berland, Kristian, Farivar, Rashid, Hyldgaard, Per, Larsson, Anders, Stattin, Martin, Sultan, D. M. S., Wang, Shu Min   +7 more
core   +1 more source