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Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion
Advanced Science, Volume 13, Issue 33, 15 June 2026.This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv +6 more
wiley +1 more source
Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier
MetrologyGaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr +3 more
doaj +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
Журнал нано- та електронної фізики, 2013 Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Ashutosh Kumar +4 more
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Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN
Elektronika ir Elektrotechnika, 2019 This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN).
Marek Suproniuk +5 more
doaj +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, Volume 12, Issue 12, 22 June 2026.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
EcoEnergy, Volume 4, Issue 3, June 2026.Despite its potential, photocatalysis is limited by inefficient charge carrier separation and transport. This article reviews the mechanisms, characterization methods, and strategies for improvement, concluding with future challenges in the field. ABSTRACT Photocatalysis offers a promising solution to environmental and renewable energy issues. However,
Leqi Cheng +5 more
wiley +1 more source
Failure mechanisms and electromechanical coupling in semiconducting nanowires
EPJ Web of Conferences, 2010 One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells.
Peng B. +3 more
doaj +1 more source
Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing
Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang +6 more
wiley +1 more source
III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
机车电传动, 2023 Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran +3 more
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Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature [PDF]
Journal of Optoelectronical Nanostructures, 2018 Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C).
Mahdi Gholampour +4 more
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