Results 31 to 40 of about 19,006 (214)
, 2012 This paper presents the preliminary results of optical characterization using spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin films with medium indium content (0 ...
McLaughlin, D. V. P., Pearce, Joshua M.
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Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
Crystals, 2018 An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/
Yi-Yun Chen +5 more
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Crystals, 2020 The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates.
Haixiao Hu +6 more
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Supercritical millifluidic reactor for the synthesis of efficient GaN nanophotocatalysts
Chemical Engineering Journal Advances, 2023 Here, we demonstrate the continuous synthesis of gallium nitride (GaN) nanophotocatalysts exhibiting high quantum confinement using a preheated supercritical millireactor.
Prasaanth Ravi Anusuyadevi +4 more
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SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2016 Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the ...
Marina G. Mynbaeva +9 more
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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]
, 2019 GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro +3 more
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Chemistry Central Journal, 2018 Using a mass-loss method, we investigated the solubility change of gallium nitride (GaN) in supercritical ammonia with mixed mineralizers [ammonium chloride (NH4Cl) + ammonium bromide (NH4Br) and NH4Cl + ammonium iodide (NH4I)].
Daisuke Tomida +4 more
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Micro & Nano Letters, 2022 Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM).
Kejia Wang +5 more
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Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor
, 2015 Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low ...
Amirthapandian, S. +4 more
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Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source