Results 31 to 40 of about 2,749 (180)

Temperature dependent control of the solubility of gallium nitride in supercritical ammonia using mixed mineralizer

Chemistry Central Journal, 2018
Using a mass-loss method, we investigated the solubility change of gallium nitride (GaN) in supercritical ammonia with mixed mineralizers [ammonium chloride (NH4Cl) + ammonium bromide (NH4Br) and NH4Cl + ammonium iodide (NH4I)].
Daisuke Tomida, Kiyoshi Kuroda, Kentaro Nakamura, Kun Qiao, Chiaki Yokoyama   +4 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure

Micro & Nano Letters, 2022
Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM).
Kejia Wang, Tiantian Wei, Yuzi Song, Yahong Xie, Xiaodong Hu, Zhiyuan Cheng   +5 more
doaj   +1 more source

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Synthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method [PDF]

Journal of Nanostructures, 2017
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function.
Mahdi Gholampour, Mahdi Soltanzadeh
doaj   +1 more source

Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

Advanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang, Zhen‐Hui Qin, Yi‐Han He, Yun‐Fei Cheng, Hao Yan, Si‐Yuan Yu, Ming‐Hui Lu, Yan‐Feng Chen   +7 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers

Advanced Physics Research, EarlyView.
A universal epitaxial strategy overcomes the long‐standing limitation of insulating buffers in GaN‐on‐Silicon technology. By exploiting a unique amorphous‐like interlayer (AL‐IL) formed via ultrathin metal pre‐deposition, high‐quality GaN films with excellent vertical conductivity are realized on silicon wafers.
Fumio Kawamura, Takeyoshi Onuma, Kazutaka Mitsuishi   +2 more
wiley   +1 more source

Redefining the Nitrogen Cycle Through Electronic Configuration Driven Electrocatalysis for Low Carbon Energy

Carbon Energy, EarlyView.
This review reveals how electronic configuration engineering governs the entire electrocatalytic nitrogen cycle, providing structure‐informed insights into reaction selectivity, catalytic durability, and sustainable nitrogen utilization across energy and environmental systems. ABSTRACT The global nitrogen cycle is essential to food production, chemical
Jiamu Feng, Linai Zhou, Mincan Yang, Aoxiang Zhu, Zengfeng Wei, Weilin Xu, Jia Li, Jun Wan   +7 more
wiley   +1 more source