Results 11 to 20 of about 856 (145)

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Конденсированные среды и межфазные границы, 2023
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin   +13 more
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Fabrication method of GaN template for high-speed chemical lift-off

AIP Advances, 2023
In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve
Woo Seop Jeong, Min Joo Ahn, Hyun-A Ko, Kyu-yeon Shim, Seongho Kang, Hwayoung Kim, Dae-sik Kim, Junggeun Jhin, Dongjin Byun   +8 more
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Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

Nanomaterials, 2016
Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation ...
Tae-Hee Kim, Sooseok Choi, Dong-Wha Park
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Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

IEEE Access, 2019
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
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Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]

AIP Advances
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin, O. Tanriverdi, B. Karahan, F. Yasar   +3 more
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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Materials Research Express, 2020
A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the ...
Yuanyang Xia, Youhua Zhu, Chunhua Liu, Hongyuan Wei, Tingting Zhang, Yeeheng Lee, Tinggang Zhu, Meiyu wang, Li Yi, Mei Ge   +9 more
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Neutron detection using boron gallium nitride semiconductor material

APL Materials, 2014
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter.
Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano   +4 more
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Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The Journal of Engineering, 2015
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the
Shaofei Zhang, David Arto Laleyan, Qi Wang, Zetian Mi   +3 more
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Recycling the GaN Waste from LED Industry by Pressurized Leaching Method

Metals, 2018
In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future.
Wei-Sheng Chen, Li-Lin Hsu, Li-Pang Wang
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Experimental dataset of nanoporous GaN photoelectrode supported on patterned sapphire substrates for photoelectrochemical water splitting

Data in Brief, 2019
GaN is one of the most promising materials for high PEC efficiency to produce clean, renewable hydrogen in an ecofriendly manner (Ebaid et al., 2015; Kamimura et al., 2017; Yang et al., 2018; Ohkawa et al., 2013).
Dongjing Li, Jianghua Liu, Yang Wang, Aixia Wu, Ruolin Ruan, Zeping Li, Zhimou Xu   +6 more
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