Results 11 to 20 of about 2,749 (180)

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review. [PDF]

Sensors (Basel), 2020
In the last two decades, GaN nanostructures of various forms like nanowires (NWs), nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have been reported for gas sensing applications. In this paper, we have reviewed our group’s work and the works published by other groups on the advances in GaN nanostructures-based sensors for
Khan MAH, Rao MV.
europepmc   +5 more sources

Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals, 2020
The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates.
Haixiao Hu, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao   +6 more
doaj   +3 more sources

Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1) [PDF]

Materials, 2022
Mariusz Drygas, Katarzyna Lejda, Jerzy F Janik   +2 more
exaly   +2 more sources

Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications [PDF]

Micromachines
Gallium nitride (GaN)-based materials and devices, as a core representative of third-generation semiconductors, have emerged as a strategic frontier driving modern electronics and optoelectronics revolutions [...]
Wei Liu, Kun Wang
doaj   +2 more sources

New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN [PDF]

Materials, 2021
Mariusz Drygas, Katarzyna Lejda, Jerzy F Janik   +2 more
exaly   +2 more sources

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V) [PDF]

Scientific Reports
This work demonstrates, for the first time, the three-dimensional monolithic integration of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) directly on gallium nitride (GaN) high electron mobility transistors (HEMTs) in a ...
Tian-Li Wu, Hsin-Jou Ho, Chia-Wei Liu, Shivendra Kumar Singh, Yi-Chen Chen, Hsin-Wei Chen   +5 more
doaj   +2 more sources

Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Journal of Low Power Electronics and Applications, 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Results in Physics, 2019
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan   +4 more
doaj   +1 more source