Results 21 to 30 of about 2,749 (180)
Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the ...
Yuanyang Xia +9 more
doaj +1 more source
Neutron detection using boron gallium nitride semiconductor material
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter.
Katsuhiro Atsumi +4 more
doaj +1 more source
Recycling the GaN Waste from LED Industry by Pressurized Leaching Method
In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future.
Wei-Sheng Chen, Li-Lin Hsu, Li-Pang Wang
doaj +1 more source
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the
Shaofei Zhang +3 more
doaj +1 more source
GaN is one of the most promising materials for high PEC efficiency to produce clean, renewable hydrogen in an ecofriendly manner (Ebaid et al., 2015; Kamimura et al., 2017; Yang et al., 2018; Ohkawa et al., 2013).
Dongjing Li +6 more
doaj +1 more source
Synthesis of Single Crystal GaN Nanowires
The straight and curved gallium nitride (GaN) nanowires were successfully synthesized by controlling the gallium/ nitrogen reactant ratio via a chemical vapour deposition method.
Lining Fang, Bin Cai
doaj +1 more source
III-Nitride Materials: Properties, Growth, and Applications
Since the activation of magnesium (Mg) in p-type gallium nitride (GaN) [...]
Yangfeng Li
doaj +1 more source
Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/
Yi-Yun Chen +5 more
doaj +1 more source
SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE [PDF]
Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the ...
Marina G. Mynbaeva +9 more
doaj +1 more source
Supercritical millifluidic reactor for the synthesis of efficient GaN nanophotocatalysts
Here, we demonstrate the continuous synthesis of gallium nitride (GaN) nanophotocatalysts exhibiting high quantum confinement using a preheated supercritical millireactor.
Prasaanth Ravi Anusuyadevi +4 more
doaj +1 more source

