Results 101 to 110 of about 2,749 (180)

Dipolar modulation of surface states in GaN via molecular ionization energy. [PDF]

Sci Rep
Chaulker OH, Turkulets Y, Shapira Y, Goldman RS, Shalish I.   +4 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Native GaN/GaO_x Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors. [PDF]

Research (Wash D C)
Liang J, Liu C, Wei Y, Feng S, Sun Y, Ohno Y, Cheng HM, Sun DM.   +7 more
europepmc   +1 more source

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]

Micromachines (Basel)
Drabczyk A, Uss P, Bucka K, Bulowski W, Kasza P, Mazur P, Boguta E, Mazur M, Putynkowski G, Socha RP.   +9 more
europepmc   +1 more source

Synthesis, Characterization, and Electrochemical Behavior of Layered Vanadium Nitride MXene. [PDF]

ACS Nano
Ngozichukwu B, Kubitza N, Hoagland L, Birkel CS, Djire A.   +4 more
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source