Results 101 to 110 of about 19,006 (214)

Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics

Molecules
As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in ...
Yi Peng, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, Wenhong Sun   +9 more
doaj   +1 more source

Understanding the adsorption performance of T-G, T-BN, T-AlN, and T-GaN nanosheets toward the thioguanine anticancer drug via DFT calculations

AIP Advances
In this study, the sensitivity and reactivity of the T-graphene (T-G), T-boron nitride (T-BN), T-aluminum nitride (T-AlN), and T-gallium nitride (T-GaN) as carriers for thioguanine (Tg) anticancer drug have been explored using DFT simulations.
Md Najmus Sakib, Tanvir Ahmed, Md Adam Shafiulla, Dr. Farzana Afroj, Afiya Akter Piya, Siraj Ud Daula Shamim   +5 more
doaj   +1 more source

Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

Acta Polytechnica, 2006
We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering onsilicon, quartz and Corning glass substrates.
V. Prajzler, Z. Burian, I. Hüttel, J. Špirková, J. Hamáček, J. Oswald, J. Zavadil, V. Peřina   +7 more
doaj  

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

Small
Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
europepmc   +1 more source

Polyethyleneimine-Directed In Situ Gold Deposition on Gallium Nitride Nanoparticles for Enhanced Electrochemical Detection of Erythromycin. [PDF]

Int J Mol Sci
Carp OE, Bostiog DI, Ursu EL, Mocanu RG, Marangoci NL, Tiginyanu I, Rotaru A.   +6 more
europepmc   +1 more source

Insights into the adsorption performance of temozolomide on T-based 2D nanosheets from DFT and COSMO calculations. [PDF]

Nanoscale Adv
Dostagir MSR, Piya AA, Opi MH, Ashik-E-Elahe M, Shamim SUD.   +4 more
europepmc   +1 more source

Triggering avalanche-like ultraviolet photomultiplication phenomena in ultrathin amorphous/crystalline gallium nitride heterostructures. [PDF]

Sci Adv
Luo D, Zhang H, Yan Y, Chen W, Wang D, Yu H, Liu X, Kang Y, Memon MH, Gao Z, Luo Y, Liu S, Gu W, Ooi BS, Fu L, Liu S, Sun H.   +16 more
europepmc   +1 more source

Vertical Gallium Nitride (GaN) Transistors For Extreme Environments

University of the District of Columbia Engineering Department Seminar November 19, 2021 virtual, 2021
openaire   +2 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source