Results 121 to 130 of about 2,749 (180)
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1999
Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
Sadao Adachi, Adachi Sadao
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Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
Sadao Adachi, Adachi Sadao
exaly +2 more sources
Physical nitriding reaction of organic metal with solvent-free gallium nitride (GaN)
Gallium Nitride Materials and Devices XVIII, 2023exaly +2 more sources
Spectroscopic constants and potential energy curves of gallium nitride (GaN) and ions: GaN+ and GaN−
Chemical Physics Letters, 2006Abstract Electronic states of GaN and their ions are studied by employing multi-reference configuration interaction (MRCI) and relativistic DKCCSD(T) calculations. The 3 Σ − state is 532 cm −1 below the 3 Π state using MRCI, whereas the DKCCSD(T)/CBS energy separation is 857 cm −1 .
Pablo A. Denis, K. Balasubramanian
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2015
GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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Broadband Gallium Nitride (GaN) Power Amplifiers
ECS Transactions, 2013Broadband Gallium Nitride (GaN) power amplifiers (PAs) capable of delivering 100 Watts of continuous power from 225 MHz to 2 GHz are reported using GaN power transistors fabricated with 0.5 micron GaN-on-SiC foundry process. The measured third-order intermodulation distortion (IMD3) signal amplitude is below -28 dBc.
S. K. Leong, K. Shenai
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Nanopowders of gallium nitride GaN surface functionalized with manganese
Journal of Materials Science, 2016Four GaN nanopowders of systematically varying surface properties, prepared via an anaerobic synthesis method from gallium imide (ammonia assisted decomposition in the range 600–975 °C), were subjected to functionalization with manganese centers. Each powder was slurried in a diluted hexane solution of manganese (II) bis{bis[trimethylsilyl]amide} Mn{N ...
Michał Musiał +4 more
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Modern power switches: the Gallium Nitride (GaN) technology
2014 9th IEEE Conference on Industrial Electronics and Applications, 2014Silicon Power MOSFETs, with more than fifty years of development, are widely accepted and applied in power converters. Gallium Nitride (GaN) power devices are commercially available in recent years, but the device performance and application have not been fully developed. These devices include Schottky Barrier Diode (SBD) and P-I-N rectifiers,??
Cynthia Abi Abboud +4 more
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Wurtzite Gallium Nitride (α-GaN)
1999GaN-based III–V nitride semiconductors currently attract extensive attention for their potential electronic and optoelectronic device applications, such as blue-UV light-emitting diodes and laser diodes [1,2]. GaN films have been grown with a wide range of growth techniques, including CVD, MOCVD, and MBE.
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INVESTIGATION OF COMPLEX INDEX OF REFRACTION OF GALLIUM NITRIDE GaN
Journal of Natural Sciences Engineering and Technology, 2018An understanding of the complex index of refraction of Gallium Nitride (GaN) is important because of the increasing application of GaN in many high frequency, optical and electronics devices. Complex index of refraction of Gallium Nitride (GaN)have been investigated theoretically by means of Kramers and Kronig method in the photon energy range 2.0 â ...
J O AKINLAMI, I O OLATEJU
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Characterization of gallium nitride (GaN) blue LEDs
Proceedings of SPIE, 1995Abstract Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LED's are a double heterojunction structure of InGaN/A1GaN that have a peak output at 450 mu. Other groups have investigated these devices for full color displays.
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