Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]
van der Wel BY +3 more
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Reflection coefficient and optical conductivity of gallium nitride GaN [PDF]
openaire +1 more source
Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]
Górecki K, Posobkiewicz K.
europepmc +1 more source
Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
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Radiation Hardened LIDAR Sensor: Conceptual Design, Testing, and Performance Evaluation. [PDF]
Jonasson ET +3 more
europepmc +1 more source
Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: Modeling. [PDF]
Alhasani R +4 more
europepmc +1 more source
Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]
Li S +13 more
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Optical phonon confinement significantly lowers the hot electron energy loss rate in III-nitride (InN, GaN, and AlN) and GaAs nanoscale structures. [PDF]
Thi Phuong Thuy H, Hien ND.
europepmc +1 more source
Vacancy and Strain Effects on the Stability and Electronic Properties of 2D-Mg Intercalated GaN. [PDF]
Wu Q, Zhang S, Song X, Zhang X.
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Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]
Zhou H +16 more
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