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Modelling of 2-D Gallium Nitride (GaN) photonic crystal
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016This paper presents the simulation of a photonic crystal (PhC) cavity in low index contrast materials- Gallium Nitride on the sapphire substrate using two-dimensional (2D) Finite Difference Time Domain method (FDTD). We have performed the simulation based on H1 PhC configurations with the variation of lattice constant.
Nur Dalila Mohd Zamani +2 more
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Gallium Nitride (GaN) High Power Electronics (FY11)
2012Abstract : This report covers work done for the Director's Research Initiative (DSI) on Gallium Nitride (GaN) High Power Electronics (HPE) in which GaN devices are assessed in comparison to those fabricated from silicon carbide (SiC). We show that for low power applications (less than 1500 V) GaN diodes should have a lower on-resistance, and therefore ...
Shuai Zhou +5 more
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Iron Acceptors in Gallium Nitride (GaN)
Materials Science Forum, 1993Karin Maier +6 more
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Reflection coefficient and optical conductivity of gallium nitride GaN
2017Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2???10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV ...
Akinlami, J.O., Olateju, I.O.
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LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
IEEE Transactions on Nuclear Science, 2021Jason M Osheroff +2 more
exaly
Gallium nitride (GaN) on silicon substrates for LEDs
2014Matthew H. Kane, Nazmul Arefin
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