Results 151 to 160 of about 19,006 (214)
Some of the next articles are maybe not open access.
Modern power switches: the Gallium Nitride (GaN) technology
2014 9th IEEE Conference on Industrial Electronics and Applications, 2014Silicon Power MOSFETs, with more than fifty years of development, are widely accepted and applied in power converters. Gallium Nitride (GaN) power devices are commercially available in recent years, but the device performance and application have not been fully developed. These devices include Schottky Barrier Diode (SBD) and P-I-N rectifiers,??
Cynthia Abi Abboud +4 more
openaire +1 more source
Wurtzite Gallium Nitride (α-GaN)
1999GaN-based III–V nitride semiconductors currently attract extensive attention for their potential electronic and optoelectronic device applications, such as blue-UV light-emitting diodes and laser diodes [1,2]. GaN films have been grown with a wide range of growth techniques, including CVD, MOCVD, and MBE.
openaire +1 more source
Gallium Nitride (GaN) High Power Electronics (FY11)
2012Abstract : This report covers work done for the Director's Research Initiative (DSI) on Gallium Nitride (GaN) High Power Electronics (HPE) in which GaN devices are assessed in comparison to those fabricated from silicon carbide (SiC). We show that for low power applications (less than 1500 V) GaN diodes should have a lower on-resistance, and therefore ...
Shuai Zhou +5 more
openaire +1 more source
1999
Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
openaire +1 more source
Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that
openaire +1 more source
Advanced power electronic devices based on Gallium Nitride (GaN)
2015 IEEE International Electron Devices Meeting (IEDM), 2015It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some of the recent
Daniel Piedra +10 more
openaire +1 more source
Characterization of gallium nitride (GaN) blue LEDs
Proceedings of SPIE, 1995Abstract Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LED's are a double heterojunction structure of InGaN/A1GaN that have a peak output at 450 mu. Other groups have investigated these devices for full color displays.
openaire +1 more source
Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor
2014 IEEE Central America and Panama Convention (CONCAPAN XXXIV), 2014In this paper an effective method for modeling parasitic capacitances of Gallium Nitride (GaN) FET transistors is presented. The proposed method is a modification of a method that was proposed for Gallium Arsenide (GaAs) transistors. The modification consists of the computation of a constant relating to the asymmetry of the transistor when it is ...
openaire +1 more source