Results 141 to 150 of about 19,006 (214)

DFT and solvent-phase insights into nitrosourea adsorption on AlN, GaN and their in-plane heterostructure (AlN/GaN) nanosheets. [PDF]

RSC Adv
Saba TY, Piya AA, Ahmed T, Daula Shamim SU.   +3 more
europepmc   +1 more source

Uni-traveling-carrier photodiode based on MoS₂/GaN van der Waals heterojunction for high-speed visible-light detection. [PDF]

Nat Commun
Kadowaki T, Serikawa T, Ichikawa A, Ohmaki Y, Usami K, Kawakami Y, Iwasa Y, Ogawa H.   +7 more
europepmc   +1 more source

Widely tunable and narrow-linewidth violet lasers enabled by UV-transparent materials. [PDF]

Nat Commun
Franken CAA, Hendriks WAPM, Winkler LV, do Nascimento AR, van Rees A, Dijkstra M, Mardani S, Kienzler D, Dekker R, van Kerkhof J, van der Slot PJM, García-Blanco SM, Boller KJ.   +12 more
europepmc   +1 more source

Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

High efficiency, high color purity red micro-light-emitting diodes. [PDF]

Light Sci Appl
Wu Y, Xiao Y, Reddeppa M, Malhotra Y, Guo Y, Xiao J, Liu J, Wang D, Sun K, Mi Z.   +9 more
europepmc   +1 more source

RBFNN-Based PPy/GaN sensor array with wide dynamic range and sub-ppb detection for accurate ammonia identification in human exhaled breath. [PDF]

Microsyst Nanoeng
Jia Z, Wang W, Han D, Yan L, Guang J, Duan Q, Wang Y, Cheng Z, Wang G, Wang W, Sang S.   +10 more
europepmc   +1 more source

Interface-driven energy-independent charge extraction in GaN photocatalysts. [PDF]

Nat Commun
Gao Y, Xie Y, Höhn C, Wollgarten M, Kropf H, Fan F, Li C, van de Krol R, Friedrich D.   +8 more
europepmc   +1 more source

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Broadband Gallium Nitride (GaN) Power Amplifiers

ECS Transactions, 2013
Broadband Gallium Nitride (GaN) power amplifiers (PAs) capable of delivering 100 Watts of continuous power from 225 MHz to 2 GHz are reported using GaN power transistors fabricated with 0.5 micron GaN-on-SiC foundry process. The measured third-order intermodulation distortion (IMD3) signal amplitude is below -28 dBc.
S. K. Leong, K. Shenai
openaire   +1 more source

Gallium Nitride (GaN)

2015
GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor

Sensor Letters, 2020
In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in
Wafa Maati, Abdelkader Hamdoune
openaire   +1 more source