Results 141 to 150 of about 2,429 (186)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

2022
openaire   +1 more source

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and Actuators B: Chemical, 2020
Heqiu Zhang, Hongwei Liang, Hongwei Liang   +2 more
exaly  

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
Mohamed Fauzi Packeer Mohamed, Mohd Syamsul, Muhammad Firdaus Akbar Jalaludin Khan   +2 more
exaly  

METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT DEVICE

2021
IUCOLANO FERDINANDO, TRINGALI CRISTINA
openaire   +2 more sources

GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application

2008
In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Guziewicz, M., Thoth, L., Pecz, B., Thorpe, J., Morvan, E., Gaquière, Christophe, Meneghesso, G.   +12 more
openaire   +2 more sources

A 5-Bit X-Band GaN HEMT-Based Phase Shifter

Electronics (Switzerland), 2021
Hsuan-Ling Kao, Hsien-Chin Chiu, Li-Chun Chang   +2 more
exaly  

Differential-mode HEMT-based biosensor for real-time and label-free detection of C-reactive protein

Sensors and Actuators B: Chemical, 2016
Jang-Kyoo Shin, Jung-Hee Lee, Chul-Ho Won   +2 more
exaly  

Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs

Microelectronics Reliability, 2023
exaly  

Review of GaN HEMT Applications in Power Converters over 500 W

Electronics (Switzerland), 2019
Ma Chao-Tsung
exaly  

HEMT Devices

1993
Masayuki Abe, Takashi Mimura
openaire   +1 more source