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Utilization of BiLSTM- and GAN-Based Deep Neural Networks for Automated Power Amplifier Optimization over X-Parameters. [PDF]
Sensors (Basel)Kouhalvandi L.
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ECM-based molecular subtypes define prognostic, EMT status, and therapeutic diversity in IDH-mutant gliomas. [PDF]
NPJ Precis OncolWei Y +10 more
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Approach to the Patient With Pancreatogenic Diabetes.
J Clin Endocrinol MetabOde KL, Imai Y, Norris AW.
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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers
IEEE Transactions on Microwave Theory and Techniques, 2002The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 /spl Omega/ of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2/sup 31/-1 pattern ...
P. Fay, C. Caneau, I. Adesida
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Compare noise characteristic of DC-HEMT and HEMT
2013 21st Iranian Conference on Electrical Engineering (ICEE), 2013We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions.
Sonia Sadeghi +2 more
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Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
physica status solidi (a), 2010AbstractAlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies.
Chen, Kevin J., Zhou, Chunhua
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Japanese Journal of Applied Physics, 1986
A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
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A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
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1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), 2003
The High Electron Mobility Transistor (HEMT) device structure has played a significant role in analog and digital integrated circuit technology since the early 1980s. The development of the HEMT followed a typical path from fundamental studies of materials to device design and modeling.
D. Docter +6 more
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The High Electron Mobility Transistor (HEMT) device structure has played a significant role in analog and digital integrated circuit technology since the early 1980s. The development of the HEMT followed a typical path from fundamental studies of materials to device design and modeling.
D. Docter +6 more
openaire +1 more source