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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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Compare noise characteristic of DC-HEMT and HEMT
2013 21st Iranian Conference on Electrical Engineering (ICEE), 2013We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions.
Sonia Sadeghi +2 more
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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Comparison of electrical characteristics of metamorphic HEMTs with InP HEMTs and PHEMTs
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and ...
Kenji Kawada +6 more
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Microelectronics Journal, 2003
The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein +3 more
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DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
2015 4th International Conference on Electrical Engineering (ICEE), 2015In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current.
Zine-eddine Touati +2 more
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GaN HEMT for Space Applications
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
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Hemt’s capability for millimeter wave applications
Annales Des Télécommunications, 2001Ce papier presente un etat actuel des performances de puissance et de bruit des transistors a effet de champ a gaz ďelectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dependance des caracteristiques electriques de ces composants avec la structure de couche (materiaux employes, epaisseursi) et la geometric Enfin on compare
Bollaert, S. +5 more
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Large-signal HEMT modelling, specifically optimized for InP based HEMTs
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 2002InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits.
D. Schreurs +7 more
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GaN HEMT modeling for power and RF applications using ASM-HEMT
2016 3rd International Conference on Emerging Electronics (ICEE), 2016In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC).
Sudip Ghosh +4 more
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