Results 171 to 180 of about 16,542 (226)

Breakdown walkout in pseudomorphic HEMT's

IEEE Transactions on Electron Devices, 1996
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage.
MENOZZI, Roberto, COVA, Paolo, FANTINI, F, CANALI C.   +3 more
openaire   +4 more sources

DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT

2015 4th International Conference on Electrical Engineering (ICEE), 2015
In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current.
Zine-eddine Touati, Zahra Hamaizia, Zitouni Messai   +2 more
openaire   +1 more source

GaN HEMT for Space Applications

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
openaire   +2 more sources

p-HEMT with tailored field

Microelectronics Journal, 2003
The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of ...
Samson Mil'shtein, Peter Ersland, Shivarajiv Somisetty, C. Gil   +3 more
openaire   +2 more sources

?????????????????? ???????????????????????? ?????????????????????? ???????????????????? ???? HEMT

2017
?? ???????????? ???????????????????? ???????????? ???????????????????? ?????????????????? ???????????????????????? ???? HEMT, ???????? ?????????????????? ???? ?????????????????????????????? ???????????????????????? ?? ???????????????????? ?? ???????????????? ?????????????????? ?????????????????. ???????????????????? ?? ???????????????????????????????? ?
openaire   +3 more sources

Hemt’s capability for millimeter wave applications

Annales Des Télécommunications, 2001
Ce papier presente un etat actuel des performances de puissance et de bruit des transistors a effet de champ a gaz ďelectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dependance des caracteristiques electriques de ces composants avec la structure de couche (materiaux employes, epaisseursi) et la geometric Enfin on compare
Bollaert, S., Cordier, Y., Zaknoune, M., Parenty, T., Happy, H., Cappy, A.   +5 more
openaire   +4 more sources

Thermal Modeling of GaN HEMTs

2010
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska, Ashwin Ashok, O. Hartin, Stephen Marshall Goodnick   +3 more
openaire   +2 more sources

GaN HEMT modeling for power and RF applications using ASM-HEMT

2016 3rd International Conference on Emerging Electronics (ICEE), 2016
In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC).
Sudip Ghosh, Sheikh Aamir Ahsan, Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan   +4 more
openaire   +1 more source

High frequency GaN HEMT Modeling with ASM-HEMT

2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022
R. Sommet, J.A Silva Dos Santos, A. Santos, J.C Nallatamby   +3 more
openaire   +1 more source

Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure

Silicon, 2022

exaly