Results 191 to 200 of about 12,880 (229)
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IEE Colloquium on Advanced Developments in Microelectronic Engineering, 1996
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
openaire +1 more source
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
openaire +1 more source
International Journal of High Speed Electronics and Systems
In terahertz (THz) applications, Field-effect transistors (FETs) have emerged as prime candidates for the next generation of THz and sub-THz electronics. One of the main advantages of TeraFETs over state-of-the-art commercial THz electronics based on Schottky diodes is their ability to tune the plasma frequency over a wide range via gate voltage, which
Michael Shur, Grigory Simin
openaire +1 more source
In terahertz (THz) applications, Field-effect transistors (FETs) have emerged as prime candidates for the next generation of THz and sub-THz electronics. One of the main advantages of TeraFETs over state-of-the-art commercial THz electronics based on Schottky diodes is their ability to tune the plasma frequency over a wide range via gate voltage, which
Michael Shur, Grigory Simin
openaire +1 more source
Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors
Micromachines, 2023Asrulnizam Abd Manaf +2 more
exaly
Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs
Microelectronics Reliability, 2023Shuxiang Sun +2 more
exaly
Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure
Silicon, 2022, Mohammad Fallahnejad
exaly