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Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials, 1984
M. Abe +4 more
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M. Abe +4 more
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GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application
2008In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A. +12 more
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An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps
IEEE Electron Device Letters, 2023Yanlin Wu, Maojun Wang, Muqin Nuo
exaly
2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT
IEEE Transactions on Electron Devices, 2023Raghvendra Dangi +3 more
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