Results 111 to 120 of about 16,542 (226)

Simulation of Quasi-Vertical E-Mode GaN HEMT on Si Substrate

Gallium Nitride (GaN) power devices are confronting the critical challenge of evolving from lateral to vertical architectures to achieve higher performance.
Liang, Guangkai, Jia, Mao, Zheng, Xuefeng, Li, Kang, Chen, Yilin, Hao, Yue, Wong, Man Hoi, Ma, Xiaohua   +7 more
core   +1 more source

Cardiovascular Manifestations of Cystic Fibrosis. [PDF]

J Clin Med
Garg K, Agrawal A, Mustafa A, Elnashar M, Gilbert G, Rosenzveig A, Lakkimsetti A, Haroun E, Arockiam AD, Hoyek K, Tan C, Wang TKM.   +11 more
europepmc   +1 more source

Temperature dependent Rolletti stability analysis of GaN HEMT

, 2009
In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT).
Gokrem, L., Celebi, F. V., Yavuzcan, HÜSEYİN GÜÇLÜ, Yildirim, R.   +3 more
core  

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

ETS1 Orchestrates a Hybrid EMT Program Driving Metastasis and Immune Evasion. [PDF]

Cancer Res
Ziman B, Wenger TA, Nam C, Yang Q, Arnaudov D, Tilton T, Sheth M, Jing Z, Pan Y, Vargas JA, Teng Y, Sinha UK, Park YM, Lin DC.   +13 more
europepmc   +1 more source

Evolving Cystic Fibrosis Therapy: The Good, the Sad, and the Hopeful. [PDF]

Children (Basel)
Funken D, Grasemann H.
europepmc   +1 more source

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

, 2006
AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping, Hu Guoxin, Li Jinmin, Wang Xiaoliang, Luo Weijun, Xiao Hongling, Qian He, Liu Xinyu, Wang Cuimei, Ma Zhiyong, Wang Zhanguo, Chen Xiaojuan   +11 more
core  

Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]

Nat Commun
Shi Y, Dong Z, Wang J, Guo D, Li W, Sha W, Li Z, Yang Z, Zhang J, Liu J, Xu T, Hu W, Wang ZL, Zhai J.   +13 more
europepmc   +1 more source