Results 111 to 120 of about 12,880 (229)

Zastosowanie tranzystorów HEMT z azotku galu w impulsowych przekształtnikach mocy

, 2016
Praca zawiera przegląd problematyki zastosowań tranzystorów HEMT (high electron mobility transistors) w wysokosprawnych układach przekształtników mocy.
Janke, W.
core  

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi

, 2014
This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT).
Toprak, Ahmet
core  

Sensitive and wafer-scale olfactory sensory neurons. [PDF]

Microsyst Nanoeng
Zhang W, Li H, Hu Z, Guo L, Chen J, Zhang H, Mao R, Li HY, Zhang Y, Liu H.   +9 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

An x-band peeled HEMT amplifier

, 1993
A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns ...
Young, Paul G., Smith, Edwyn D., Alterovitz, Samuel A., Romanofsky, Robert R.   +3 more
core  

Prevalence of overweight and obesity in a South Texas cystic fibrosis center. [PDF]

J Clin Transl Endocrinol
Pillai R, Zaitoon H, Koek W, Vavrina K, Ortiz E, Rayas M.   +5 more
europepmc   +1 more source

ETS1 Orchestrates a Hybrid EMT Program Driving Metastasis and Immune Evasion. [PDF]

Cancer Res
Ziman B, Wenger TA, Nam C, Yang Q, Arnaudov D, Tilton T, Sheth M, Jing Z, Pan Y, Vargas JA, Teng Y, Sinha UK, Park YM, Lin DC.   +13 more
europepmc   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source