Results 91 to 100 of about 26,201 (217)

Extracellular Particles Derived From Mesenchymal Stromal Cells Reduce Pseudomonas aeruginosa Lung Infection and Inflammation in Mice

Journal of Extracellular Biology, Volume 5, Issue 2, February 2026.
ABSTRACT The World Health Organization and the U.S. Centre for Disease Control and Prevention have reported that antibiotic‐resistant infections with Pseudomonas aeruginosa present a significant health risk worldwide. In the genetic disease Cystic Fibrosis (CF), chronic antibiotic‐resistant Pseudomonas lung infections and persistent inflammation remain
Sharanya Sarkar, Roxanna Barnaby, Zachary Faber, Lily Taub, Carolyn Roche, Lily A. Charpentier, Thomas H. Hampton, Brad Vietje, Douglas J. Taatjes, Byoung‐Kyu Cho, Young Ah Goo, Matthew J. Wargo, Daniel J. Weiss, Tracey L. Bonfield, Thomas J. Kelley, Bruce A. Stanton   +15 more
wiley   +1 more source

A widely tunable parametric amplifier based on a SQUID array resonator

, 2007
We create a Josephson parametric amplifier from a transmission line resonator whose inner conductor is made from a series SQUID array. By changing the magnetic flux through the SQUID loops, we are able to adjust the circuit's resonance frequency and ...
Castellanos-Beltran, M. A., Lehnert, K. W.   +1 more
core   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source

A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

Научно-технический вестник информационных технологий, механики и оптики
The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers.
A. Farti, A. Touhami
doaj   +1 more source

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

, 2015
We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip.
Erickson, Robert P., Hilton, Gene, Ku, Hsiang-Sheng, Pappas, David P., Vale, Leila, Vissers, Michael R., Wu, Xian   +6 more
core   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

HEMT 60 GHz amplifier

Electronics Letters, 1985
A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance.
J. Berenz, K. Nakano, Ting-Ih Hsu, J. Goel   +3 more
openaire   +1 more source

GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]

, 2016
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla, Elgaid, Khaled, Guiney, Ivor, Li, Xu, Wallis, David J.   +4 more
core