Results 91 to 100 of about 16,542 (226)
Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
embargoed_20280909Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital ...
DE BONI, DAMIANO
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Zastosowanie tranzystorów HEMT z azotku galu w impulsowych przekształtnikach mocy [PDF]
, 2016 Praca zawiera przegląd problematyki zastosowań tranzystorów HEMT (high electron mobility transistors) w wysokosprawnych układach przekształtników mocy.
Janke, W.
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GaN HEMT Oscillators with Buffers
MicromachinesWith their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang +3 more
openaire +2 more sources
, 2022 Studio dei fenomeni di intrappolamento di carica e di degrado in dispositivi GaN-HEMT, con analisi dei fenomeni in dispositivi package attraverso misure dinamiche e DCreservedEmbargo permanente per motivi di segretezza e/o di proprietà dei risultati e ...
Girotto, Marco
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, 1997 首次建立了δ掺杂AlGaAs/GaAs高电子迁移率晶体管(HEMT)的二维量子模型，这种模型考虑了HEMT器件沟道中二维电子气的量子特性。根据这个模型，应用二维数值模拟方法和自洽求解薛定谔方程和泊松方程获得了器件沟道中的二维电子浓度，同时也得到了器件沟道中的横向电场分布和横向电流密度，模拟结果表明二维电子气主要分布在异质结GaAs一侧量子阱中 ...
张兴宏, 王占国, 杨玉芬
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IEEE AccessIn this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT ...
B. Mounika +7 more
doaj +1 more source
, 2008 研制成功具有场板结构的AlGaN／GaN HEMT器件，对源场板、栅场板器件的性能进行了分析．场板的引入减小了器件漏电和肖特基漏电，提高了肖特基反向击穿电压．源漏间距4μm的HEMT的击穿电压由常规器件的65V提高到100V以上，肖特基反向漏电由37μA减小到5．7μA，减小了一个量级．肖特基击穿电压由常规结构的78V提高到100V以上．另外 ...
魏珂, 和致经, 吴德馨, 刘新宇
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, 2011 由于锑化物具有高电子迁移率和高电子饱和漂移速度等优越的材料性能, 锑化物高电子迁移率晶体管(HEMT)微电子器件在制造新一代超高速、超低功耗电子器件和集成电路应用方面极具潜力, 有很大的发展空间.
张杨, 李彦波, 刘超, 曾一平
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EXTRACTION OF ON-BOARD TRM HIGH-POWER MICROWAVE HEMT PARAMETERS
Научный вестник МГТУ ГА, 2016 Analytical nonlinear model of high-power microwave HEMT with parallel resonance circuits was designed. Extraction method of high-power HEMT parameters without optimization usage was proposed and described. Test board for high-power HEMT measurement for 0.
R. Yu. Malakhov
doaj
ERJ Open ResearchBackground Chronic rhinosinusitis (CRS) and olfactory dysfunction (OD) are prevalent disease complications in people with cystic fibrosis. These understudied comorbidities significantly impact quality of life.
Christine M. Liu +23 more
doaj +1 more source