Results 91 to 100 of about 12,880 (229)
, 1997 A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT.
Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. +3 more
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Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
embargoed_20280909Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital ...
DE BONI, DAMIANO
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, 2008 研制成功具有场板结构的AlGaN／GaN HEMT器件，对源场板、栅场板器件的性能进行了分析．场板的引入减小了器件漏电和肖特基漏电，提高了肖特基反向击穿电压．源漏间距4μm的HEMT的击穿电压由常规器件的65V提高到100V以上，肖特基反向漏电由37μA减小到5．7μA，减小了一个量级．肖特基击穿电压由常规结构的78V提高到100V以上．另外 ...
魏珂, 和致经, 吴德馨, 刘新宇
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Analisi della stabilità di due generazioni di transistor GaN HEMT per applicazioni spaziali
, 2022 I transistor GaN HEMT sono una tecnologia promettente nel campo dell’alta frequenza, ma presentano ancora grandi problemi di affidabilità. Lo scopo di questo lavoro è stato quello di indagare i meccanismi di degrado di questi dispositivi, confrontando ...
Dalcanale, Stefano
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, 1997 首次建立了δ掺杂AlGaAs/GaAs高电子迁移率晶体管(HEMT)的二维量子模型，这种模型考虑了HEMT器件沟道中二维电子气的量子特性。根据这个模型，应用二维数值模拟方法和自洽求解薛定谔方程和泊松方程获得了器件沟道中的二维电子浓度，同时也得到了器件沟道中的横向电场分布和横向电流密度，模拟结果表明二维电子气主要分布在异质结GaAs一侧量子阱中 ...
张兴宏, 王占国, 杨玉芬
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, 2011 由于锑化物具有高电子迁移率和高电子饱和漂移速度等优越的材料性能, 锑化物高电子迁移率晶体管(HEMT)微电子器件在制造新一代超高速、超低功耗电子器件和集成电路应用方面极具潜力, 有很大的发展空间.
张杨, 李彦波, 刘超, 曾一平
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Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия
, 2017 Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2.
C.B. Оболенский +4 more
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, 2011 随着高压开关和高速射频电路的发展，增强型GaN基高电子迁移率晶体管(HEMT)成为该领域内的研究热点。增强型GaN基HEMT只有在加正栅压才有工作电流，可以大大拓展该器件在低功耗数字电路中的应用。近年来，国内外对增强型GaN基HEMT阈值电压的研究主要集中以下两个方面: 在材料生长方面，通过生长薄势垒、降低Al组分、生长无极化电荷的 AIGaN/GaN异质材料、生长InGaN或p-GaN盖帽层，来控制二维电子气浓度; 在器件工艺方面，采用高功函数金属、MIS结构、刻蚀凹栅、F基等离子体处理 ...
颜伟 +6 more
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High-power microwave transistors based on wide-band semiconductors
Технологія та конструювання в електронній апаратурі, 2003 A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate ...
V. I. Bosyi +3 more
doaj
IEEE AccessIn this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT ...
B. Mounika +7 more
doaj +1 more source