Results 61 to 70 of about 12,880 (229)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

High-quality metamorphic HEMT grown on GaAs substrates by MBE

, 2001
Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature
Cui LJ, Zeng YP, Cao X, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +7 more
core   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

Study of influence of bulk on break-down and trapping phenomena in power AlGaN/GaN MIS-HEMTs grown on Si-substrate [PDF]

, 2022
This thesis work is based on the study of trapping phenomena in power HEMTs based on Gallium-Nitride (GaN). In particular, MIS-HEMT devices are studied and characterized.
Rigato, Matteo
core  

Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices

Micromachines
A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state.
Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

HEMT-HBT matrix amplifier

, 2000
A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT
PAOLONI, CLAUDIO, Paoloni, C
core   +1 more source

Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]

Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
doaj  

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

Severe Hypoxia Reduces Adenylyl Cyclase 6 Expression and Function in Bronchial Epithelial Cells

FASEB BioAdvances, Volume 8, Issue 4, April 2026.
Adenylyl cyclase 6 (AC6) plays an important role in the generation of cyclic adenosine monophosphate (cAMP) in the lungs. In cystic fibrosis, excessive mucus production and reduced mucociliary clearance create regions of severe hypoxia that can affect cell functions.
Ryan H. Cunnington, Nisha Singh, Marziyeh Shafizadeh, John W. Hanrahan, Shyamala Dakshinamurti, Prashen Chelikani   +5 more
wiley   +1 more source