Results 61 to 70 of about 16,542 (226)

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, Volume 13, Issue 20, 21 October 2026.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Small-signal RF performance enhancement of GaN HEMT using a graded channel structure: A TCAD-to-circuit approach

Results in Engineering
This work presents a systematic device-to-circuit framework for the design and analysis of a 2 GHz small-signal linear RF amplifier using a GaN HEMT.
Husna Hamza, Julie Roslita Rusli, S. Merlin Gilbert Raj, D. Nirmal   +3 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

High-quality metamorphic HEMT grown on GaAs substrates by MBE

, 2001
Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature
Cui LJ, Zeng YP, Cao X, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +7 more
core   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, Volume 3, Issue 3, Page 233-267, September 2026.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Effect of Phosphate Fertilization and Cutting Date Improves Nutritional Status and Productive Parameters of a Tropical Forage Legume

Legume Science, Volume 8, Issue 3, September 2026.
ABSTRACT The use of chemical fertilizers is economically and environmentally costly to produce and apply. Therefore, optimized fertilizer use is critical to increase or maintain crop yields. We evaluated the productive and nutritional characteristics of the Stylosanthes cv “Campo Grande” submitted to different cutting date and phosphate fertilization ...
Daniele de Jesus Ferreira, Higo Gustavo da Silva Rocha, Aline Lima dos Anjos, Henrique Nunes Parente, Michelle de Oliveira Maia Parente, Rosane Cláudia Rodrigues, Ricardo Martins Araújo Pinho, Edson Mauro Santos, Anny Graycy Vasconcelos de Oliveira Lima, Thiago Vinícus Costa Nascimento, Francisca Claudia da Silva de Sousa, Fleming Sena Campos, Francisco Naysson de Sousa Santos, Hactus Souto Cavalcanti, Dilier Olivera‐Viciedo, Anderson de Moura Zanine   +15 more
wiley   +1 more source

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

, 2009
A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV.
Dai Yang, Yang Fuhua, Chen Yanling, Du Rui   +3 more
core  

Polymicrobial Extracellular Vesicles Reduce the Innate Immune Response of Human Cystic Fibrosis Bronchial Epithelial Cells

Journal of Extracellular Biology, Volume 5, Issue 8, August 2026.
ABSTRACT Chronic antibiotic‐resistant cystic fibrosis (CF) lung infections are the leading cause of death in adults with CF. Despite advances in highly effective modulator therapies, microbial communities persist in the CF lung. The pathogenesis of CF airway infections can be exacerbated by pathogens such as Pseudomonas aeruginosa, which communicates ...
Lily A. Charpentier, Roxanna L. Barnaby, Carolyn T. Roche, Byoung‐Kyu Cho, Prashant Kaushal, Young Ah Goo, Brad Vietje, Douglas J. Taatjes, Alix Ashare, Fabrice Jean‐Pierre, Bruce A. Stanton   +10 more
wiley   +1 more source