Results 61 to 70 of about 2,429 (186)

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
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GaN HEMT Oscillators with Buffers

Micromachines
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang, Ching-Yen Huang, Tzu Chin Yang, Chien-Tang Lu   +3 more
openaire   +2 more sources

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Micromachines
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper.
Zixin Zhen, Chun Feng, Hongling Xiao, Lijuan Jiang, Wei Li   +4 more
doaj   +1 more source

High-power microwave transistors based on wide-band semiconductors

Технологія та конструювання в електронній апаратурі, 2003
A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate ...
V. I. Bosyi, A. V. Ivashchuk, V. N. Kovalchuk, E. M. Semashko   +3 more
doaj  

EXTRACTION OF ON-BOARD TRM HIGH-POWER MICROWAVE HEMT PARAMETERS

Научный вестник МГТУ ГА, 2016
Analytical nonlinear model of high-power microwave HEMT with parallel resonance circuits was designed. Extraction method of high-power HEMT parameters without optimization usage was proposed and described. Test board for high-power HEMT measurement for 0.
R. Yu. Malakhov
doaj  

A Novel L_G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

IEEE Access
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT ...
B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal   +7 more
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The impact of highly effective modulator therapy on sinusitis and dysosmia in young children with cystic fibrosis: a prospective study protocol

ERJ Open Research
Background Chronic rhinosinusitis (CRS) and olfactory dysfunction (OD) are prevalent disease complications in people with cystic fibrosis. These understudied comorbidities significantly impact quality of life.
Christine M. Liu, Jakob L. Fischer, Edith T. Zemanick, Jason C. Woods, Karolin K. Markarian, Sean B. Fain, Deborah Froh, Sonya L. Heltshe, Lucas R. Hoffman, Stephen M. Humphries, Elizabeth L. Kramer, Katie Larson Ode, Michael Lewis, Douglas A. Li, Jaime Mata, Sarah S. Milla, Peter J. Niedbalski, Benjamin D. Sawatzky, Myung-Shin Sim, Jillian S. Sullivan, Andrew T. Trout, Christopher H. Goss, Jennifer L. Taylor-Cousar, Daniel M. Beswick   +23 more
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