Results 61 to 70 of about 26,201 (217)
Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers
Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh +3 more
wiley +1 more source
Neural-Based Nonlinear Device Models for Intermodulation Analysis [PDF]
, 2003 A new procedure to learn a nonlinear model together with its derivative parameters using a composite neural network is presented.So far neural networks have never been used to extract large-signal device model accounting for distortion parameters ...
Colantonio, P. +4 more
core +1 more source
Optimization of MKID Noise Performance Via Readout Technique for Astronomical Applications [PDF]
, 2010 Detectors employing superconducting microwave kinetic inductance detectors (MKIDs) can be read out by measuring changes in either the resonator frequency or dissipation. We will discuss the pros and cons of both methods, in particular, the readout method
Anastasios Vayonakisa +22 more
core +3 more sources
physica status solidi (b), Volume 263, Issue 4, April 2026.This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui +3 more
wiley +1 more source
Zhongguo Jianchuan YanjiuObjectiveThis paper discusses the damage characteristics of gallium nitride (GaN)-based low-noise amplifiers (LNA) under high power microwave (HPM) pulses.
Min LIU +6 more
doaj +1 more source
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
doaj +1 more source
MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH
Российский технологический журнал, 2016 The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are ...
D. V. Krapukhin, P. P. Maltsev
doaj +1 more source
Amplifier for scanning tunneling microscopy at MHz frequencies
, 2018 Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously performing ...
Allan, M. P. +6 more
core +4 more sources
Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]
, 2011 We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D. +6 more
core +2 more sources
Severe Hypoxia Reduces Adenylyl Cyclase 6 Expression and Function in Bronchial Epithelial Cells
FASEB BioAdvances, Volume 8, Issue 4, April 2026.Adenylyl cyclase 6 (AC6) plays an important role in the generation of cyclic adenosine monophosphate (cAMP) in the lungs. In cystic fibrosis, excessive mucus production and reduced mucociliary clearance create regions of severe hypoxia that can affect cell functions.
Ryan H. Cunnington +5 more
wiley +1 more source