Results 31 to 40 of about 26,201 (217)
International Journal for Simulation and Multidisciplinary Design Optimization, 2022 The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid +2 more
doaj +1 more source
Tunable plasma wave resonant detection of optical beating in high electron mobility transistor [PDF]
, 2006 We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor.
Akwoue-Ondo, A. +6 more
core +3 more sources
A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]
, 2003 The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P. +7 more
core +1 more source
Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov +3 more
doaj +1 more source
Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
openaire +1 more source
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
doaj +1 more source
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source
Oscillator Phase Noise and Small-Scale Channel Fading in Higher Frequency Bands [PDF]
, 2014 This paper investigates the effect of oscillator phase noise and channel variations due to fading on the performance of communication systems at frequency bands higher than 10GHz.
Eriksson, Thomas +3 more
core +2 more sources
Results in EngineeringTo enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun +4 more
doaj +1 more source