Results 31 to 40 of about 2,429 (186)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source

MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH

Российский технологический журнал, 2016
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are ...
D. V. Krapukhin, P. P. Maltsev
doaj   +1 more source

Effect of Phosphate Fertilization and Cutting Date Improves Nutritional Status and Productive Parameters of a Tropical Forage Legume

Legume Science, Volume 8, Issue 3, September 2026.
ABSTRACT The use of chemical fertilizers is economically and environmentally costly to produce and apply. Therefore, optimized fertilizer use is critical to increase or maintain crop yields. We evaluated the productive and nutritional characteristics of the Stylosanthes cv “Campo Grande” submitted to different cutting date and phosphate fertilization ...
Daniele de Jesus Ferreira, Higo Gustavo da Silva Rocha, Aline Lima dos Anjos, Henrique Nunes Parente, Michelle de Oliveira Maia Parente, Rosane Cláudia Rodrigues, Ricardo Martins Araújo Pinho, Edson Mauro Santos, Anny Graycy Vasconcelos de Oliveira Lima, Thiago Vinícus Costa Nascimento, Francisca Claudia da Silva de Sousa, Fleming Sena Campos, Francisco Naysson de Sousa Santos, Hactus Souto Cavalcanti, Dilier Olivera‐Viciedo, Anderson de Moura Zanine   +15 more
wiley   +1 more source