Results 31 to 40 of about 12,880 (229)

Millimeter-Wave MMICs and Applications [PDF]

, 2003
As device technology improves, interest in the millimeter-wave band grows. Wireless communication systems migrate to higher frequencies, millimeter-wave radars and passive sensors find new solid-state implementations that promise improved performance ...
Morgan, Matthew Alexander
core   +1 more source

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure

Results in Engineering
To enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun, Xintong Xie, Hongying Mei, Xiaorong Luo, J. Ajayan   +4 more
doaj   +1 more source

Contact Modeling and Analysis of InAs HEMT Transistors

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
core   +1 more source

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Micromachines, 2023
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip ...
Kuo-Bin Hong, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, Chun-Hsiung Lin   +7 more
doaj   +1 more source

An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT

, 2010
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit ...
Lok, L.B., Chi-Jeon Hwang, Lai Bun Lok, Holland, Martin, Holland, M., Thayne, I.G., Hwang, C.J., Elgaid, Khaled, Elgaid, K., Hwang, C-J., Iain G. Thayne, Chong, Harold M H, Thayne, Iain G, Martin Holland, Hwang, Chi-Jeon, Khaled Elgaid, Harold M. H. Chong, Chong, Harold, Chong, H.M.H.   +18 more
core   +1 more source

Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection

East European Journal of Physics
In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors.
Abdellah Bouguenna, Abdelhadi Feddag, Driss Bouguenna, Ibrahim Farouk Bouguenna   +3 more
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Studio dei fenomeni di degradazione di dispositivi HEMT su GaN sottoposti a stress in corrente [PDF]

, 2022
In questo lavoro di tesi è stato studiato l’effetto di degradazione di dispositivi HEMT su Nitruro di Gallio per applicazioni di potenza nel campo delle microonde (da 300 MHz a 300 GHz), in particolare analizzando l’effetto di una polarizzazione a ...
Corraini, Sebastiano
core  

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source