Results 11 to 20 of about 26,201 (217)
Impact of COVID-19 and CFTR Modulators on Cystic Fibrosis: A Real-World Analysis of Care Patterns. [PDF]
Pediatr PulmonolABSTRACT Introduction Novel therapeutics and rapid expansion of telehealth have reshaped cystic fibrosis (CF) care; however, the impact on visit patterns and equitable access across the CF population remains unclear. We characterized changes in visit patterns from 2017 to 2022 and the association of sociodemographic and clinical factors with visit ...
Hinton AC +3 more
europepmc +2 more sources
Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Adv Sci (Weinh)Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F +15 more
europepmc +2 more sources
On large-signal modeling of GaN HEMTs: past, development and future
Chip, 2023 In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
doaj +1 more source
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
ETRI Journal, 2023 We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application.
Byoung-Gue Min +7 more
doaj +1 more source
Ocular development after highly effective modulator treatment early in life
Frontiers in Pharmacology, 2023 Highly effective cystic fibrosis (CF) transmembrane conductance regulator (CFTR) modulator therapies (HEMT), including elexacaftor-tezacaftor-ivacaftor, correct the underlying molecular defect causing CF.
Yimin Zhu +5 more
doaj +1 more source
Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
doaj +1 more source
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
doaj +1 more source
Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]
Serbian Journal of Electrical EngineeringThis paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
doaj +1 more source
Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
Micromachines, 2021 A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is ...
Rui-Rong Wang +4 more
doaj +1 more source
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
core +3 more sources