Results 11 to 20 of about 16,542 (226)
, 2000 A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT
PAOLONI, CLAUDIO, Paoloni, C
core +5 more sources
On large-signal modeling of GaN HEMTs: past, development and future
Chip, 2023 In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
doaj +1 more source
Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
doaj +1 more source
Ocular development after highly effective modulator treatment early in life
Frontiers in Pharmacology, 2023 Highly effective cystic fibrosis (CF) transmembrane conductance regulator (CFTR) modulator therapies (HEMT), including elexacaftor-tezacaftor-ivacaftor, correct the underlying molecular defect causing CF.
Yimin Zhu +5 more
doaj +1 more source
Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
openaire +1 more source
Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]
Serbian Journal of Electrical EngineeringThis paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
doaj +1 more source
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
doaj +1 more source
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications [PDF]
, 2005 The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
H. McLelland +10 more
core +1 more source
Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
Micromachines, 2021 A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is ...
Rui-Rong Wang +4 more
doaj +1 more source
Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs [PDF]
, 1996 The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations.
Cameron, N. +3 more
core +1 more source