The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
IEEE Journal of the Electron Devices Society, 2022 The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu +9 more
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Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs [PDF]
, 1996 The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations.
Cameron, N. +3 more
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Research on HEMT device parameter extraction method based on artificial neural network
Dianzi Jishu Yingyong, 2020 Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
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Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
AIP Advances, 2020 In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin +9 more
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Affidabilità e stima del tempo di vita di transistor GaN HEMT per applicazioni spaziali [PDF]
, 2022 Il lavoro di tesi si è concentrato sullo studio dell'affidabilità di una tecnologia di transistor HEMT AlGaN/GaN per applicazioni spaziali. Lo studio è stato effettuato attraverso un test di storage a tre temperature.
Vertuan, Marcello
core
Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]
Journal of Electrical and Computer Engineering Innovations, 2019 Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
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Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
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Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
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International Journal for Simulation and Multidisciplinary Design Optimization, 2022 The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid +2 more
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Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov +3 more
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