Results 21 to 30 of about 16,542 (226)

Research on HEMT device parameter extraction method based on artificial neural network

Dianzi Jishu Yingyong, 2020
Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2022
The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo   +9 more
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Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AIP Advances, 2020
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian   +9 more
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Contact Modeling and Analysis of InAs HEMT Transistors [PDF]

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
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Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]

Journal of Electrical and Computer Engineering Innovations, 2019
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
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Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov, V. A. Tchekhovski, A. V. Kunts, A. A. Paulyuchyk   +3 more
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Affidabilità e stima del tempo di vita di transistor GaN HEMT per applicazioni spaziali [PDF]

, 2022
Il lavoro di tesi si è concentrato sullo studio dell'affidabilità di una tecnologia di transistor HEMT AlGaN/GaN per applicazioni spaziali. Lo studio è stato effettuato attraverso un test di storage a tre temperature.
Vertuan, Marcello
core  

Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]

Journal of Electromagnetic Engineering and Science
This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
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Simulation Study of a p-GaN HEMT with an Integrated Schottky Barrier Diode

, 2021
In this article, a novel p -GaN high-electron-mobility transistor (HEMT) with a built-in Schottky barrier diode (SBD) is proposed and investigated by TCAD simulation.
Wu, Zheng, Ng, Wai Tung, Yi, Bo, Zhang, Weijia, Cheng, Junji, Huang, Haimeng   +5 more
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Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

International Journal for Simulation and Multidisciplinary Design Optimization, 2022
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid, Radi Bouchaïb, El Hami Abdelkhalak   +2 more
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