Results 21 to 30 of about 2,429 (186)

Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]

Journal of Electrical and Computer Engineering Innovations, 2019
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
doaj   +1 more source

Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov, V. A. Tchekhovski, A. V. Kunts, A. A. Paulyuchyk   +3 more
doaj   +1 more source

Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]

Journal of Electromagnetic Engineering and Science
This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
doaj   +1 more source

Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

International Journal for Simulation and Multidisciplinary Design Optimization, 2022
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid, Radi Bouchaïb, El Hami Abdelkhalak   +2 more
doaj   +1 more source

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure

Results in Engineering
To enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun, Xintong Xie, Hongying Mei, Xiaorong Luo, J. Ajayan   +4 more
doaj   +1 more source

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Micromachines, 2023
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip ...
Kuo-Bin Hong, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, Chun-Hsiung Lin   +7 more
doaj   +1 more source

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source

Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection

East European Journal of Physics
In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors.
Abdellah Bouguenna, Abdelhadi Feddag, Driss Bouguenna, Ibrahim Farouk Bouguenna   +3 more
doaj   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source