Results 21 to 30 of about 70,189 (251)

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Energies, 2021
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Chih-Chiang Wu, Ching-Yao Liu, Guo-Bin Wang, Yueh-Tsung Shieh, Wei-Hua Chieng, Edward Yi Chang   +5 more
doaj   +1 more source

Reliability of p-GaN Gate HEMTs in Reverse Conduction

IEEE Transactions on Electron Devices, 2021
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J.P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan   +9 more
openaire   +3 more sources

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
core   +3 more sources

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]

, 2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro, Martínez, Pedro J., Maset, Enrique, Morilla García, Yolanda   +3 more
core   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template

Applied Sciences, 2019
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron ...
Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang   +7 more
doaj   +1 more source

Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]

, 2011
We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D., Coutu, Ronald A., Jr., Heller, Eric R., Poling, Brian S., Shealy, Jeffrey B., Vetury, Ramakrishna, Via, Glen D.   +6 more
core   +2 more sources