Results 21 to 30 of about 25,575,016 (220)
-GaN Gate Double-Channel GaN HEMT
, 2023 Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen +15 more
core +1 more source
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
IEEE Electron Device Letters, 2022 In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
M. Millesimo +7 more
openaire +2 more sources
An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps
, 2023 An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer.
Zheng, Zheyang +12 more
core +1 more source
, 2023 A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high ...
Zhongkai Du +8 more
core +1 more source
Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
doaj +1 more source
Unstable behaviour of normally-off GaN E-HEMT under short-circuit [PDF]
, 2023 The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride ...
Maset Sancho, Enrique +7 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
doaj +1 more source
Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
, 2021 We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen +19 more
core +1 more source
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE Electron Device Letters, 2023 In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro +7 more
openaire +2 more sources
Energy Reports, 2023 In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang +3 more
doaj +1 more source