Results 31 to 40 of about 25,575,016 (220)

High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

, 2023
The dynamic stability of E-mode active-passivation p-GaN gate HEMT (AP- HEMT) is investigated, including dynamic VTH shift, dynamic RON degradation, and dynamic leakage current.
Zheng, Zheyang, Hao, Yilong, Wei, Jin, Wang, Maojun, Zhang, Li, Chen, Kevin J., Nuo, Muqin, Yang, Xuelin, Hua, Mengyuan, Shen, Bo, Wu, Yanlin, Yang, Junjie   +11 more
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Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Micromachines, 2021
Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features
Ya-Chun Chang, Yu-Li Ho, Tz-Yan Huang, Ding-Wei Huang, Chao-Hsin Wu   +4 more
doaj   +1 more source

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template

Applied Sciences, 2019
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron ...
Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang   +7 more
doaj   +1 more source

Caratterizzazione DC e dinamica di dispositivi di potenza su GaN [PDF]

, 2022
Breve descrizione dei più comuni dispositivi di potenza su Si e di modelli sperimentali su GaN, con relativa caratterizzazione DC e dinamica.
Grassi, Biagio
core  

Simulation Study of a p-GaN HEMT with an Integrated Schottky Barrier Diode

, 2021
In this article, a novel p -GaN high-electron-mobility transistor (HEMT) with a built-in Schottky barrier diode (SBD) is proposed and investigated by TCAD simulation.
Wu, Zheng, Ng, Wai Tung, Yi, Bo, Zhang, Weijia, Cheng, Junji, Huang, Haimeng   +5 more
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Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

A low phase noise W-band MMIC GaN HEMT oscillator [PDF]

, 2020
This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry.
Dan Kuylenstierna, Yan, Yu,, Thanh Ngoc Thi Do, Thanh, Thi Ngoc Do, Yan, Yu, Thanh, Thi Ngoc Do,, Kuylenstierna, Dan,, Kuylenstierna, Dan, Yu Yan   +8 more
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HEMT GaN Normally Off Reliability comparison

, 2021
International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Simulations of High Mobility AlGaN/GaN Field Effect Transistors. Mobility and Quantum Effects [PDF]

, 2022
Introduction to GaN and GaN-based HEMT. Mobility in HEMT and implementation of GaN mobility model in Sentaurus simulator. Quantum effects in HEMT and simultations of different back barriers (InGaN and AlGaN)openEmbargo per motivi di segretezza e di ...
Omenetto, Leonardo
core