Developing of normally-off p-GaN gate HEMT
Journal of Physics: Conference Series, 2019 Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva +7 more
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Micromachines, 2021 Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features
Ya-Chun Chang +4 more
doaj +1 more source
Oscillator Phase Noise and Small-Scale Channel Fading in Higher Frequency Bands [PDF]
, 2014 This paper investigates the effect of oscillator phase noise and channel variations due to fading on the performance of communication systems at frequency bands higher than 10GHz.
Eriksson, Thomas +3 more
core +2 more sources
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Nanotechnology and Precision Engineering, 2020 Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi +6 more
doaj +1 more source
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE Electron Device Letters, 2023 In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro +7 more
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Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling [PDF]
, 2015 We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system ...
d'Alessandro, Vincenzo +6 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
doaj +1 more source
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]
, 2013 Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources
A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT
Energies, 2023 This paper presents a 250 kHz bidirectional battery charger circuit using a GaN HEMT. The charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is a hybrid of the LLC and flyback circuit topologies.
Yueh-Tsung Shieh +8 more
doaj +1 more source