Results 11 to 20 of about 70,189 (251)

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +3 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

Micromachines, 2022
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, Yun Huang   +5 more
doaj   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
doaj   +1 more source

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico   +6 more
openaire   +2 more sources

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source