Results 41 to 50 of about 70,189 (251)

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Micromachines, 2022
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate.
Yingshuo Qin, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, Yintang Yang   +5 more
doaj   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines, 2021
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity.
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang   +9 more
doaj   +1 more source

Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

Results in Physics, 2021
We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software.
Peng-lin Wang, Hui-qing Sun, Xiao Ding, Zhi-hui Huang, Yuan Li, Fan Xia, Xiao-yu Xia, Miao Zhang, Jian-cheng Ma, Xiu-yang Tan, Liang Xu, Zhi-you Guo   +11 more
doaj   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

IEICE Electronics Express, 2021
A three-level gate driver and a power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) were monolithically integrated to prevent false turn-on, reduce reverse conduction loss and realize fast switching.
J. Nagao, U. Chatterjee, Xiangdong Li, J. Furuta, S. Decoutere, Kazutoshi Kobayashi   +5 more
semanticscholar   +1 more source

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

, 2017
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the ...
Dolmanan, Surani Bin, Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy Neelim, Pratiyush, Anamika Singh, Tripathy, Sudhiranjan   +5 more
core   +1 more source

Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]

, 2012
The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart, Binari, Chowdhury, Chu, delAlamo, Faqir, Joh, Kim, Klein, Koley, Leach, Meneghesso, Menozzi, Mizutani, Ohki, Pei, Roff, Simms, Tan, Trew, Ťapajna, Ťapajna, Ťapajna, Ťapajna, Ťapajna   +24 more
core   +2 more sources

Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

Materials Research Express, 2021
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj   +1 more source