Results 41 to 50 of about 25,575,016 (220)

A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT

Energies, 2023
This paper presents a 250 kHz bidirectional battery charger circuit using a GaN HEMT. The charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is a hybrid of the LLC and flyback circuit topologies.
Yueh-Tsung Shieh, Chih-Chiang Wu, Shyr-Long Jeng, Ching-Yao Liu, Shiang-Yu Hsieh, Chi-Chun Haung, Wen-Yuh Shieh, Wei-Hua Chieng, Edward-Yi Chang   +8 more
doaj   +1 more source

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

Плазменное травление в технологии InAlN/GaN HEMT

, 2020
Проанализированы экспериментальные данные по плазменному травлению суб-100-нм затворных щелей в транзисторах с высокой подвижностью электронов (HEMT) на основе гетероструктур InAlN/GaN.
Филиппов, Иван Андреевич, Брудный, Павел Александрович, Шахнов, Вадим Анатольевич, Великовский, Леонид Эдуардович, Демченко, Ольга Игоревна   +4 more
core   +1 more source

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Micromachines, 2022
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate.
Yingshuo Qin, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, Yintang Yang   +5 more
doaj   +1 more source

The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines, 2021
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity.
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang   +9 more
doaj   +1 more source

Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

Results in Physics, 2021
We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software.
Peng-lin Wang, Hui-qing Sun, Xiao Ding, Zhi-hui Huang, Yuan Li, Fan Xia, Xiao-yu Xia, Miao Zhang, Jian-cheng Ma, Xiu-yang Tan, Liang Xu, Zhi-you Guo   +11 more
doaj   +1 more source

Characterization in Schottky-Type p-GaN Gate Power HEMT

, 2021
A multi-functional bootstrap voltage clamping circuit is proposed for characterizing the drain-bias-induced dynamic VTH, in which the GaN HEMT serves as the key bootstrapping device.
Zheng, Zheyang, Junting Chen, Song Yang, Xu, Han, Yang, Song, Kailun Zhong, Kevin J. Chen, Zheyang Zheng, Chen, Kevin J., Zhong, Kailun, Han Xu, Chen, Junting   +11 more
core   +1 more source

Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

, 2018
National audienceUn nouveau concept d'interrupteur de puissance HEMT en GaN présentant la fonctionnalité « normally-off » est expérimentalement validé. L'introduction d'une couche P-GaN suffisamment dopée (autour de 2 x 10 18 cm-3) au sein de la couche ...
Chapelle, Audrey, Frayssinet, Éric, Cordier, Yvon, Morancho, Frédéric, Benmosfeta, Leïla, Trémouilles, David, Austin, Patrick, Hachem, Dany, Spiegel, Yohann, Isoird, Karine, Tasselli, Josiane, Haloui, Chaymaa   +11 more
core   +3 more sources

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

Materials Research Express, 2021
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj   +1 more source