GaN HEMT Oscillators with Buffers. [PDF]
Micromachines (Basel)With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Jang SL, Huang CY, Yang TC, Lu CT.
europepmc +4 more sources
Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices [PDF]
MicromachinesA series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state.
Shuo Su +12 more
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Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Mohamed Fauzi Packeer Mohamed +2 more
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Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]
Scientific ReportsA metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee +3 more
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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
Crystals, 2023 This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Mohamed Fauzi Packeer Mohamed +2 more
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Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation [PDF]
Nanomaterials, 2022 This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen +8 more
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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT [PDF]
Micromachines, 2021 The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu +10 more
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Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries [PDF]
Frontiers of OptoelectronicsIn this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission.
Runxian Xing +12 more
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Optimization AlGaN/GaN HEMT with Field Plate Structures [PDF]
Micromachines, 2022 Zhiyuan Cheng +2 more
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On large-signal modeling of GaN HEMTs: past, development and future
Chip, 2023 In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
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