Results 1 to 10 of about 7,995 (228)

GaN HEMT Oscillators with Buffers. [PDF]

Micromachines (Basel)
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Jang SL, Huang CY, Yang TC, Lu CT.
europepmc   +4 more sources

Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices. [PDF]

Micromachines (Basel)
A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state.
Su S, Cao Y, Zhang W, Zhang X, Chen C, Wu L, Zhang Z, Li M, Lv L, Zheng X, Tian W, Ma X, Hao Y.   +12 more
europepmc   +2 more sources

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar, Shaili Falina   +2 more
exaly   +3 more sources

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +2 more sources

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation. [PDF]

Nanomaterials (Basel), 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Chen R, Liang Y, Han J, Lu Q, Chen Q, Wang Z, Wang H, Wang X, Yuan R.   +8 more
europepmc   +2 more sources

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. [PDF]

Micromachines (Basel), 2021
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Niu D, Wang Q, Li W, Chen C, Xu J, Jiang L, Feng C, Xiao H, Wang Q, Xu X, Wang X.   +10 more
europepmc   +2 more sources

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission.
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +2 more sources

On large-signal modeling of GaN HEMTs: past, development and future

Chip, 2023
In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
doaj   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source