Results 41 to 50 of about 14,573 (221)

A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift [PDF]

APL Electronic Devices
The characterization of deep levels in AlGaN/gallium nitride (GaN) heterostructures is one of the most important problems in GaN high electron mobility transistor (HEMT) technology.
Toshihiro Ohki, Yoichi Kamada, Atsushi Yamada, Maciej Matys   +3 more
doaj   +1 more source

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing

Energy Reports, 2023
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin, Jiangjin Peng, Zimo Zhang, Fanghua Zhang, Xu Zhao, Zhenxiang Xu   +5 more
doaj   +1 more source

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]

, 2013
Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core   +2 more sources

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Tri-gate GaN junction HEMT

Applied Physics Letters, 2020
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-gate HEMTs, as they employ a Schottky or a metal-insulator-semiconductor (MIS) gate stack.
Yunwei Ma, Ming Xiao, Zhonghao Du, Xiaodong Yan, Kai Cheng, Michael Clavel, Mantu K. Hudait, Ivan Kravchenko, Han Wang, Yuhao Zhang   +9 more
openaire   +2 more sources

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

, 2017
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the ...
Dolmanan, Surani Bin, Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy Neelim, Pratiyush, Anamika Singh, Tripathy, Sudhiranjan   +5 more
core   +1 more source

Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]

, 2012
The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart, Binari, Chowdhury, Chu, delAlamo, Faqir, Joh, Kim, Klein, Koley, Leach, Meneghesso, Menozzi, Mizutani, Ohki, Pei, Roff, Simms, Tan, Trew, Ťapajna, Ťapajna, Ťapajna, Ťapajna, Ťapajna   +24 more
core   +2 more sources

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source