Results 41 to 50 of about 843 (137)

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

IEEE Journal of the Electron Devices Society, 2020
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability.
Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu   +11 more
doaj   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Accelerating Full‐Wave Antenna Optimization: An Adaptive Surrogate‐Assisted Differential Evolution Framework

Engineering Reports, Volume 8, Issue 5, May 2026.
An adaptive surrogate‐assisted differential evolution framework integrates machine learning‐based surrogate modeling with selective full‐wave electromagnetic validation to accelerate antenna optimization. A CST–Python workflow combines Latin‐hypercube sampling, cross‐validated model selection, and iterative dataset refinement to guide the search toward
Muhammad Farooq, Shahid Bashir, Mohammad Haseeb Zafar, Ruhul Amin Khalil   +3 more
wiley   +1 more source

Driving of GaN HEMT

, 2022
Wide bandgap devices like High Electron Mobility Transistors (HEMT) are currently functional and sold worldwide. Their benefits are proven [1]. However, mechanisms are still to be fully understood: at the material scale with trapping effects [1], and at the command scale with the impact of routing and conception on waveforms, since these strongly ...
Roche, Ludovic, Trémouilles, David, Marcault, Emmanuel, Alonso, Corinne   +3 more
openaire   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Energies, 2022
The flyback converter with its active cell balancing topology for charging lithium-based batteries in Electrical Vehicles (EV) have been adopted recently into the industry. Electrical Vehicle battery charging requires high current operation in continuous
Yueh-Tsung Shieh, Ching-Yao Liu, Chih-Chiang Wu, Wei-Hua Chieng, Edward-Yi Chang   +4 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source