Results 41 to 50 of about 199,581 (223)

A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift [PDF]

APL Electronic Devices
The characterization of deep levels in AlGaN/gallium nitride (GaN) heterostructures is one of the most important problems in GaN high electron mobility transistor (HEMT) technology.
Toshihiro Ohki, Yoichi Kamada, Atsushi Yamada, Maciej Matys   +3 more
doaj   +1 more source

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing

Energy Reports, 2023
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin, Jiangjin Peng, Zimo Zhang, Fanghua Zhang, Xu Zhao, Zhenxiang Xu   +5 more
doaj   +1 more source

Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications [PDF]

, 2005
The 50 nm m-HEMT exhibits extremely high f_T, of 440GHz, low F_min of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
H. McLelland, Elgaid, K., K. Elgaid, M. Holland, I.G. Thayne, Holland, M., Thayne, I.G., Moran, D., McLelland, H., D. Moran, Elgaid, Khaled   +10 more
core   +1 more source

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Studio del breakdown di dispositivi GaN HEMT di potenza

, 2022
I meccanismi di off-state breakdown e di rottura in forward bias dei dispositivi GaN HEMT sono tutt'ora oggetto di studi. Obiettivo di questa tesi è perciò quello di indagare i fenomeni di rottura dei transistor di tre diversi wafer.
Cibin, Giulia
core  

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

IEEE Journal of the Electron Devices Society, 2023
This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the gate
Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang   +6 more
doaj   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Fenomeni di intrappolamento di carica su dispositivi gan-hemt con substrato in silicio per applicazioni di potenza

, 2022
Studio dei fenomeni di intrappolamento di carica e di degrado in dispositivi GaN-HEMT, con analisi dei fenomeni in dispositivi package attraverso misure dinamiche e DCreservedEmbargo permanente per motivi di segretezza e/o di proprietà dei risultati e ...
Girotto, Marco
core  

Плазменное травление в технологии InAlN/GaN HEMT

, 2020
Проанализированы экспериментальные данные по плазменному травлению суб-100-нм затворных щелей в транзисторах с высокой подвижностью электронов (HEMT) на основе гетероструктур InAlN/GaN.
Филиппов, Иван Андреевич, Брудный, Павел Александрович, Шахнов, Вадим Анатольевич, Великовский, Леонид Эдуардович, Демченко, Ольга Игоревна   +4 more
core   +1 more source

HEMT GaN Normally Off Reliability comparison

, 2021
International audienceRecently, new HEMT GaN Normally Off with a buried Player have been developed by the LAAS Laboratory to propose a device adapted to embedded power electronics. In this article, several Normally Off HEMT GaN architectures are compared
Phulpin, Tanguy, Dinh, Thy Bich Hop
core   +2 more sources