Results 41 to 50 of about 7,995 (228)

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

IEEE Journal of the Electron Devices Society, 2023
This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the gate
Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang   +6 more
doaj   +1 more source

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing

Energy Reports, 2023
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin, Jiangjin Peng, Zimo Zhang, Fanghua Zhang, Xu Zhao, Zhenxiang Xu   +5 more
doaj   +1 more source

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Studio del breakdown di dispositivi GaN HEMT di potenza

, 2022
I meccanismi di off-state breakdown e di rottura in forward bias dei dispositivi GaN HEMT sono tutt'ora oggetto di studi. Obiettivo di questa tesi è perciò quello di indagare i fenomeni di rottura dei transistor di tre diversi wafer.
Cibin, Giulia
core  

Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT

Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim, Mun‐Kyo Lee, Soonyoung Hong, Jung‐Dong Park   +3 more
wiley   +1 more source

Fenomeni di intrappolamento di carica su dispositivi gan-hemt con substrato in silicio per applicazioni di potenza

, 2022
Studio dei fenomeni di intrappolamento di carica e di degrado in dispositivi GaN-HEMT, con analisi dei fenomeni in dispositivi package attraverso misure dinamiche e DCreservedEmbargo permanente per motivi di segretezza e/o di proprietà dei risultati e ...
Girotto, Marco
core  

Плазменное травление в технологии InAlN/GaN HEMT

, 2020
Проанализированы экспериментальные данные по плазменному травлению суб-100-нм затворных щелей в транзисторах с высокой подвижностью электронов (HEMT) на основе гетероструктур InAlN/GaN.
Филиппов, Иван Андреевич, Брудный, Павел Александрович, Шахнов, Вадим Анатольевич, Великовский, Леонид Эдуардович, Демченко, Ольга Игоревна   +4 more
core   +1 more source

When self-consistency makes a difference [PDF]

, 2008
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio, Cappelluti, Federica, Camarchia, Vittorio, Ghione, Giovanni, Donati Guerrieri, Simona, Pirola, Marco   +5 more
core   +1 more source

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies, 2019
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, Xuezhen Ding   +6 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source