Results 51 to 60 of about 14,573 (221)

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies, 2019
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, Xuezhen Ding   +6 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications [PDF]

, 2006
Cataloged from PDF version of article.Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer.
Caliskan, D., Ozbay, E., Yu, H.
core   +1 more source

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Micromachines, 2022
The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature.
Surajit Chakraborty, Tae-Woo Kim
doaj   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh, Jens Herfort, Andreas Fiedler, Oliver Brandt   +3 more
wiley   +1 more source

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor [PDF]

, 2015
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the ...
Catalàn, G., Chen, Han, Chenot, S., Chmielowska, M., Cordier, Y., Fisher, Craig A., Fontserè, A., Gammon, P. M., Iglesias, V., Jennings, M. R., Nafría, M., Placidi, M., Porti, M., Pérez-Tomás, Amador, Sharma, Yogesh K., Thomas, M.   +15 more
core   +3 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source