Results 1 to 10 of about 4,873 (226)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
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Visible-Light-Driven Semiconductor–Metal Transition in Electron Gas at the (100) Surface of KTaO₃

Nanomaterials, 2023
Two-dimensional electron gas (2DEG) at the (100) KTaO3(KTO) surface and interfaces has attracted extensive interest because of its abundant physical properties.
Xiaochen Tian, Bocheng Li, Hu Sun, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing, Jie Qiu, Guozhen Liu   +9 more
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Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing

Electronics Letters, 2021
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted.
T. Nanjo, H. Koyama, T. Imazawa, A. Kiyoi, A. Imai, T. Hayashida, T. Watahiki, Y. Yamamoto, N. Miura   +8 more
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Giant Electroresistive Ferroelectric Diode on 2DEG [PDF]

Scientific Reports, 2015
AbstractManipulation of electrons in a solid through transmitting, storing and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal.
Kim, Shin-Ik, Gwon, Hyo Jin, Kim, Dai-Hong, Kim, Seong Keun, Choi, Ji-Won, Yoon, Seok-Jin, Chang, Hye Jung, Kang, Chong-Yun, Kwon, Beomjin, Bark, Chung-Wung, Hong, Seong-Hyeon, Kim, Jin-Sang, Baek, Seung-Hyub   +12 more
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The Hofstadter energy spectrum for an interacting 2DEG [PDF]

Surface Science, 1996
LaTeX 4 pages with 3 PostScript figures, Contribution to EP2DSXI Nottingham August 95 to appear in Surface ...
Gudmundsson, Vidar, Gerhardts, Rolf R.
openaire   +2 more sources

MICROWAVE MAGNETOPLASMON ABSORPTION BY A 2DEG STRIPE [PDF]

International Journal of Modern Physics B, 2009
Microwave (MW) absorption by a high mobility 2DEG has been investigated experimentally using sensitive Electron Paramagnetic Resonance (EPR) cavity technique. It is found that MW absorption spectra are chiefly governed by confined magnetoplasmon excitations in a 2DEG stripe. Spectra of the 2D magnetoplasmons are studied as a function of magnetic field,
Fedorych, O., Studenikin, Sergei, Moreau, S., Potemski, M., Saku, T., Hirayama, Y.   +5 more
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Evidence of a 2D Electron Gas in a Single‐Unit‐Cell of Anatase TiO2 (001)

Advanced Science, 2022
The formation and the evolution of electronic metallic states localized at the surface, commonly termed 2D electron gas (2DEG), represents a peculiar phenomenon occurring at the surface and interface of many transition metal oxides (TMO).
Alessandro Troglia, Chiara Bigi, Ivana Vobornik, Jun Fujii, Daniel Knez, Regina Ciancio, Goran Dražić, Marius Fuchs, Domenico Di Sante, Giorgio Sangiovanni, Giorgio Rossi, Pasquale Orgiani, Giancarlo Panaccione   +12 more
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Universal Structural Influence on the 2D Electron Gas at SrTiO3 Surfaces

Advanced Science, 2021
The 2‐dimensional electron gas (2DEG) found at the surface of SrTiO3 and related interfaces has attracted significant attention as a promising basis for oxide electronics.
Eduardo B. Guedes, Stefan Muff, Walber H. Brito, Marco Caputo, Hang Li, Nicholas C. Plumb, J. Hugo Dil, Milan Radović   +7 more
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Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling

Nature Communications, 2020
Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO3 and KTaO3, where strong spin-orbit coupling and relativistic nature of the ...
Neha Wadehra, Ruchi Tomar, Rahul Mahavir Varma, R. K. Gopal, Yogesh Singh, Sushanta Dattagupta, S. Chakraverty   +6 more
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Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures

AIP Advances, 2019
In this computational study, the influence of GaN/AlxGa1−xN layer stack parameters, such as surface potential, aluminum mole fraction, and background donor concentration, on the two-dimensional electron gas (2DEG) density in a heterostructure is verified.
T. Scheinert, T. Mikolajick, S. Schmult
doaj   +1 more source