Results 11 to 20 of about 17,889 (195)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +2 more sources

Visible-Light-Driven Semiconductor–Metal Transition in Electron Gas at the (100) Surface of KTaO₃

Nanomaterials, 2023
Two-dimensional electron gas (2DEG) at the (100) KTaO3(KTO) surface and interfaces has attracted extensive interest because of its abundant physical properties.
Xiaochen Tian, Bocheng Li, Hu Sun, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing, Jie Qiu, Guozhen Liu   +9 more
doaj   +1 more source

Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing

Electronics Letters, 2021
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted.
T. Nanjo, H. Koyama, T. Imazawa, A. Kiyoi, A. Imai, T. Hayashida, T. Watahiki, Y. Yamamoto, N. Miura   +8 more
doaj   +1 more source

Evidence of a 2D Electron Gas in a Single‐Unit‐Cell of Anatase TiO2 (001)

Advanced Science, 2022
The formation and the evolution of electronic metallic states localized at the surface, commonly termed 2D electron gas (2DEG), represents a peculiar phenomenon occurring at the surface and interface of many transition metal oxides (TMO).
Alessandro Troglia, Chiara Bigi, Ivana Vobornik, Jun Fujii, Daniel Knez, Regina Ciancio, Goran Dražić, Marius Fuchs, Domenico Di Sante, Giorgio Sangiovanni, Giorgio Rossi, Pasquale Orgiani, Giancarlo Panaccione   +12 more
doaj   +1 more source

Universal Structural Influence on the 2D Electron Gas at SrTiO3 Surfaces

Advanced Science, 2021
The 2‐dimensional electron gas (2DEG) found at the surface of SrTiO3 and related interfaces has attracted significant attention as a promising basis for oxide electronics.
Eduardo B. Guedes, Stefan Muff, Walber H. Brito, Marco Caputo, Hang Li, Nicholas C. Plumb, J. Hugo Dil, Milan Radović   +7 more
doaj   +1 more source

Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling

Nature Communications, 2020
Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO3 and KTaO3, where strong spin-orbit coupling and relativistic nature of the ...
Neha Wadehra, Ruchi Tomar, Rahul Mahavir Varma, R. K. Gopal, Yogesh Singh, Sushanta Dattagupta, S. Chakraverty   +6 more
doaj   +1 more source

Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures

AIP Advances, 2019
In this computational study, the influence of GaN/AlxGa1−xN layer stack parameters, such as surface potential, aluminum mole fraction, and background donor concentration, on the two-dimensional electron gas (2DEG) density in a heterostructure is verified.
T. Scheinert, T. Mikolajick, S. Schmult
doaj   +1 more source

Two-dimensional electron gas generated by La-doping at SrTiO3(001) surface: A first-principles study

AIP Advances, 2013
We carried out first-principles calculations to study the electronic properties of SrO-terminated and TiO2-terminated SrTiO3(001) surfaces with La-doping at the surface.
Yun Li, Jaejun Yu
doaj   +1 more source

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

Advanced Electronic Materials, 2020
A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated.
Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Cheol Seong Hwang   +5 more
doaj   +1 more source

Direct observation of polarization-induced two-dimensional electron/hole gases at ferroelectric-insulator interface

npj Quantum Materials, 2021
Two-dimensional electron gas or hole gas (2DEG or 2DHG) and their functionalities at artificial heterostructure interfaces have attracted extensive attention in recent years.
Huaixun Huyan, Christopher Addiego, Xingxu Yan, Chaitanya A. Gadre, Alexander Melville, Darrell G. Schlom, Xiaoqing Pan   +6 more
doaj   +1 more source