Results 21 to 30 of about 4,873 (226)

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

Advanced Electronic Materials, 2020
A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated.
Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Cheol Seong Hwang   +5 more
doaj   +1 more source

Direct observation of polarization-induced two-dimensional electron/hole gases at ferroelectric-insulator interface

npj Quantum Materials, 2021
Two-dimensional electron gas or hole gas (2DEG or 2DHG) and their functionalities at artificial heterostructure interfaces have attracted extensive attention in recent years.
Huaixun Huyan, Christopher Addiego, Xingxu Yan, Chaitanya A. Gadre, Alexander Melville, Darrell G. Schlom, Xiaoqing Pan   +6 more
doaj   +1 more source

Thermal conductance between 2DEG NT and 3He bath

, 2021
Thermal conductance at ultra-low temperatures with two parallel channels: 1) via 2DEG and ohmic contacts, 2) via contact between the thermometer and liquid 3He bath.
Lev Levitin (11713958)
core   +1 more source

Control of a two-dimensional electron gas on SrTiO3 (111) by atomic oxygen

, 2014
This work was supported by Swiss National Science Foundation (200021-146995). P. D. C. K. was supported by the UK-EPSRC and the Royal Society and M. S. B. by Grant-in-Aid for Scientific Research (S) (No. 24224009) from the Ministry of Education, Culture,
McKeown Walker, S., King, P. D. C., Bahramy, M.S., Baumberger, F., Tamai, Anna, Tamai, A., King, P.D.C., Bruno, F.Y., Baumberger, Felix, Kim, T.K., Bruno, F. Y., Bruno, Flavio Yair, Shi, M., Mckeown Walker, Siobhan, Walker, S. McKeown, Bahramy, M. S., De La Torre, A., Hoesch, M., Kim, T. K., Bahramy, M. S.; id_orcid, De La Torre, Alberto   +20 more
core   +1 more source

Double quantum criticality in superconducting tin arrays-graphene hybrid

Nature Communications, 2018
Two quantum critical behaviors appear in a two dimensional electron gas (2DEG) but its origin remains to be attested. Here, Sun et al. construct superconducting puddles-2DEG hybrid system by depositing tin nano-islands array on monolayer graphene where ...
Yinbo Sun, Hong Xiao, Miao Zhang, Zhongying Xue, Yongfeng Mei, Xiaoming Xie, Tao Hu, Zengfeng Di, Xi Wang   +8 more
doaj   +1 more source

Controlling spin-mixing conductance in KTaO3 2DEGs by varying argon-ion irradiation time [PDF]

APL Electronic Devices
The Rashba-split two-dimensional electron gas (2DEG) at the surface and interface of insulating oxides such as KTaO3 (KTO) shows great promise for all-oxide spintronics.
Yasar K. Arafath, Vaishali Yadav, Nidhi Kandwal, P. N. Santhosh, Pranaba Kishor Muduli, Prasanta Kumar Muduli   +5 more
doaj   +1 more source

Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Applied Sciences, 2022
In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current–voltage and microwave noise ...
Emilis Šermukšnis, Justinas Jorudas, Artūr Šimukovič, Vitalij Kovalevskij, Irmantas Kašalynas   +4 more
doaj   +1 more source

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Nanomaterials
AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear.
Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai   +12 more
doaj   +1 more source

Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs

IEEE Journal of the Electron Devices Society, 2023
Electron mobility in extremely-thin-body (ETB) nanosheet channels and at cryogenic temperature is known to be dominated by surface roughness scattering.
Kei Sumita, Min-Soo Kang, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi   +4 more
doaj   +1 more source

Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes

, 2011
A manipulation system utilizing the properties of two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN and dielectrophoresis (DEP) was investigated in this study.
Kevin J Chen, Chen, Kevin J., Junxue Fu, Fu, Junxue   +3 more
core   +1 more source