Results 21 to 30 of about 4,877 (226)
Spin splitting in InGaSb/InAlSb 2DEG having high indium content [PDF]
We formed a novel metamorphic InGaSb/InAlSb two-dimensional electron gas (2DEG) having high indium contents around 0.9 by molecular beam epitaxy (MBE), and investigated its spin splitting through magneto-resistance (MR) characteristics by using Hall-bar ...
Yamada, S +5 more
core +1 more source
Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes [PDF]
A manipulation system utilizing the properties of two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN and dielectrophoresis (DEP) was investigated in this study.
Kevin J Chen +3 more
core +1 more source
Two-dimensional electron gas generated by La-doping at SrTiO3(001) surface: A first-principles study
We carried out first-principles calculations to study the electronic properties of SrO-terminated and TiO2-terminated SrTiO3(001) surfaces with La-doping at the surface.
Yun Li, Jaejun Yu
doaj +1 more source
A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated.
Taehwan Moon +5 more
doaj +1 more source
Two-dimensional electron gas or hole gas (2DEG or 2DHG) and their functionalities at artificial heterostructure interfaces have attracted extensive attention in recent years.
Huaixun Huyan +6 more
doaj +1 more source
Electrical spin injection and detection in high mobility 2DEG systems [PDF]
In this review paper we present the current status of research related to the topic of electrical spin injection and detection in two-dimensional electron gas (2DEG) systems, formed typically at the interface between two III–V semiconductor compounds. We
Ciorga, Mariusz
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A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs [PDF]
In this paper a novel InxAl1-xN/GaN heterostructure device is proposed by introducing a thin binary layer of strained (In, Al, Ga)-N channel at the heterointerface.
Dash, G.N., Panda, A.K., Lenka, T.R.
core +1 more source
2DEG spectroscopy with resonant tunneling through single impurity state [PDF]
International audienceWe have used silicon impurities in an aluminum arsenide barrier to probe an adjacent two-dimensional electron gas (2DEG).
Faini, G. +7 more
core +3 more sources
Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure [PDF]
Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF4) plasma treatment ...
Lau, Kei May +3 more
core +1 more source
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect [PDF]
We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1-xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density N s = (7.3 ± 0.7) × 10 12 cm-2, sheet
Paskov, Plamen P. +25 more
core +1 more source

