Results 41 to 50 of about 4,873 (226)

A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs

, 2012
In this paper a novel InxAl1-xN/GaN heterostructure device is proposed by introducing a thin binary layer of strained (In, Al, Ga)-N channel at the heterointerface.
Dash, G.N., Panda, A.K., Lenka, T.R.
core   +1 more source

Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy

Scientific Reports, 2017
The band alignment at an Al2O3/SrTiO3 heterointerface forming a two-dimensional electron gas (2DEG) was investigated using scanning photocurrent microscopy (SPCM) in an electrolyte-gated environment.
J. H. Yoon, H. J. Jung, J. T. Hong, Ji-Yong Park, Soonil Lee, S. W. Lee, Y. H. Ahn   +6 more
doaj   +1 more source

Spin Hall effect in a 2DEG in the presence of magnetic couplings [PDF]

Journal of Physics: Conference Series, 2009
It is now well established that the peculiar linear-in-momentum dependence of the Rashba (and of the Dresselhaus) spin-orbit coupling leads to the vanishing of the spin Hall conductivity in the bulk of a two-dimensional electron gas (2DEG). In this paper we discuss how generic magnetic couplings change this behaviour providing then a potential handle ...
Gorini, Cosimo, Schwab, Peter, Dzierzawa, Michael, Raimondi, Roberto, Milletarì, Mirco   +4 more
openaire   +6 more sources

Teacher Well‐Being Across Career Stages: An Ecological Study of Early‐ and Mid‐Career English Teachers in Japanese Secondary Schools

International Journal of Applied Linguistics, EarlyView.
ABSTRACT Teacher well‐being has garnered increasing attention in language education, as it plays a vital role in shaping both their professional lives and student learning. Although its importance is recognised, further research is still needed to gain a more comprehensive understanding of language teachers' well‐being.
Takeshi Onodera
wiley   +1 more source

2DEG spectroscopy with resonant tunneling through single impurity state

, 2003
International audienceWe have used silicon impurities in an aluminum arsenide barrier to probe an adjacent two-dimensional electron gas (2DEG).
Faini, G., Jouault, Benoit, Raymond, Andre, Chaubet, Christophe, Baj, M., Chenaud, Boris, Gryglas, Marta, Robert, Jean-Louis   +7 more
core   +2 more sources

Measuring Interactional Competence in a Japanese University EFL Speaking Context

International Journal of Applied Linguistics, EarlyView.
ABSTRACT The ability to interact is an integral aspect of speaking proficiency. Therefore, methods of assessing interaction need to be incorporated into second language (L2) speaking tests. The main purpose of this exploratory study is to attempt to quantify interactional competence (IC) in a Japanese university EFL (English as a foreign language ...
Paul Garside
wiley   +1 more source

Electronic and Structural Transitions of LaAlO3/SrTiO3 Heterostructure Driven by Polar Field‐Assisted Oxygen Vacancy Formation at the Surface

Advanced Science, 2021
The origin of 2D electron gas (2DEG) at LaAlO3/SrTiO3 (LAO/STO) interfaces has remained highly controversial since its discovery. Various models are proposed, which include electronic reconstruction via surface‐to‐interface charge transfer and defect ...
Kyung Song, Taewon Min, Jinsol Seo, Sangwoo Ryu, Hyungwoo Lee, Zhipeng Wang, Si‐Young Choi, Jaekwang Lee, Chang‐Beom Eom, Sang Ho Oh   +9 more
doaj   +1 more source

Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

Materials Today Advances, 2021
Two-dimensional electron gases (2DEGs) localized at oxide heterointerfaces can potentially be used in applications associated with the design of novel electronic device architectures.
Jeongwoo Park, Hyobin Eom, Seong Hwan Kim, Tae Jun Seok, Tae Joo Park, Sang Woon Lee, Bonggeun Shong   +6 more
doaj   +1 more source

Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems

Advanced Materials Interfaces
In this study, 2 electron gas(2DEG) behaviors in Al0.28Ga0.72N/GaN multichannel heterostructures with doped and undoped barrier layers and lattice‐matched In0.10Al0.40Ga0.50N/GaN multichannel heterostructures are investigated.
Wentao Zhang, Ang Li, Chong Wang, Kai Liu, Kuo Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +7 more
doaj   +1 more source

Silencing noisy 2DEG wafers

, 2009
3 pages, 5 figures Submitted to EP2DS 2009 Conf ...
Gaudreau, L., Kam, A., Zawadzki, P., Granger, G., Studenikin, S., Kycia, J., Mason, J., Sachrajda, A. S.   +7 more
openaire   +2 more sources