Results 61 to 70 of about 4,877 (226)
npj Computational Materials, 2021 Two-dimensional electron gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications.
Wahib Aggoune, Claudia Draxl
doaj +1 more source
Small Structures, Volume 7, Issue 8, August 2026.This work presents a facile surface passivation strategy for heterojunction transistors. Using an NH4Cl solution, it resolves the threshold voltage and mobility conflict in IZO/ZnO heterojunction transistors. High field‐effect mobility is preserved by passivating surface oxygen vacancies on ZnO, where OH groups form stable Zn–OH species at room ...
Qinyuan Wang +6 more
wiley +1 more source
Spintronics Phenomena of Two-Dimensional Electron Gas at Oxide Interfaces
Advanced Devices & Instrumentation, 2023 In addition to magnetism, superconductivity, quantum transport, and ferroelectricity, the tunable Rashba spin–orbit coupling from spatial inversion symmetry broken of 2-dimensional electron gas (2DEG) at oxide interfaces has been exploited to induce rich
Shiwei Chen +2 more
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Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume
Advanced Science, Volume 13, Issue 41, 22 July 2026.A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang +7 more
wiley +1 more source
Steuerung von Nb-2DEG-Nb Josephson-Kontakten mittels Strominjektion [PDF]
, 2002 Since early eighties when first superconductor/semiconductor hybrid structures JOFET (Josephson Field Effect Transistor) had been created there has been a huge interest in controlled Josephson junctions.
Guzenko, Vitaliy
core
Oxide interfaces for novel electronic applications
New Journal of Physics, 2014 Oxide heterostructures have been shown to exhibit unusual physics and hold the promise of novel electronic applications. We present a set of criteria to select and design interfaces, particularly those that can sustain a high-density two-dimensional ...
L Bjaalie +4 more
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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
Materials Research Express, 2020 A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the ...
Yuanyang Xia +9 more
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APL Materials, 2023 An ex situ chemical etching method was developed to achieve a SnO2-terminated surface in BaSnO3 films. An SnO2-terminated surface is crucial for the formation of a (LaO)+/(SnO2)0 interface structure to form the two-dimensional electron gas (2DEG) state ...
Seonghyeon Kim, Bongju Kim, Kookrin Char
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2DEGs at Perovskite Interfaces between KTaO3 or KNbO3 and Stannates
PLoS ONE, 2014 We report density functional studies of electron rich interfaces between KTaO3 or KNbO3 and CaSnO3 or ZnSnO3 and in particular the nature of the interfacial electron gasses that can be formed. We find that depending on the details these may occur on either the transition metal or stannate sides of the interface and in the later case can be shifted away
Xiaofeng Fan +3 more
openaire +5 more sources
Long‐Range Interactions in Topological Superconducting Systems: A Mini Review
Advanced Physics Research, Volume 5, Issue 7, July 2026.Long‐range interacting quantum systems are surveyed in this review, with an emphasis on the long‐range topological superconductor and its variants. Long‐range interactions decaying in a power‐law manner can lead to exotic phenomena that finds no analogue in short‐range regimes.
Juntong Ren, Haifeng Lü
wiley +1 more source