Results 61 to 70 of about 4,873 (226)
A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo +4 more
wiley +1 more source
Oxide interfaces for novel electronic applications
New Journal of Physics, 2014 Oxide heterostructures have been shown to exhibit unusual physics and hold the promise of novel electronic applications. We present a set of criteria to select and design interfaces, particularly those that can sustain a high-density two-dimensional ...
L Bjaalie +4 more
doaj +1 more source
Multi‐Mode Deep Strong Coupling in a Multi Quantum Well Fabry–Perot Cavity
Advanced Optical Materials, Volume 14, Issue 21, 5 June 2026.Multi‐mode deep‐strong coupling is demonstrated in a 166‐well heterostructure that acts as a Fabry–Perot cavity. Even cavity modes couple strongly to the cyclotron resonance, producing large vacuum Rabi splittings and a rich polaritonic spectrum captured by a full Hopfield model.
Lucy Hale +6 more
wiley +1 more source
, 2023 This work presents an analysis of strain distribution and depth of 2DEG (2-Dimensional Electron Gas) in AlGaN/GaN HEMT (high electron mobility transistor) heterostructures for different variabilities.
Saha, Jhuma, Kumar, Priyesh
core +1 more source
Nanoscale Research Letters, 2010 A two-dimensional electron gas (2DEG) situated nearby a single layer of self-assembled quantum dots (QDs) in an inverted high electron mobility transistor (HEMT) structure is used as a detector for time-resolved tunneling measurements.
Reuter Dirk +4 more
doaj +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, Volume 12, Issue 12, 22 June 2026.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Modelling 2DEG charges in AlGaN/GaN heterostructures
, 2012 In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software ...
NAPOLI, ETTORE +15 more
core +1 more source
The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency
Advanced Physics Research, Volume 5, Issue 6, June 2026.Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu +6 more
wiley +1 more source
LaInO3/BaSnO3 인터페이스에서 2DEG 상태 형성에 있어서 BaSnO3의 SnO2 터미네이션의 역할에 대한 연구 [PDF]
, 2023 학위논문(박사) -- 서울대학교대학원 : 자연과학대학 물리·천문학부(물리학전공), 2023. 8. 차국린.In recent years, oxide semiconductors have garnered significant attention in various fields such as electronics, optoelectronics, and energy conversion devices, thanks to their remarkable ...
김성현
core
APL MaterialsHigh-mobility spin-polarized two-dimensional electron gas (2DEG) at the interfaces of complex oxide heterostructures provide great potential for spintronic device applications.
Zhao-Cai Wang +4 more
doaj +1 more source