Results 81 to 90 of about 4,877 (226)

High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) heterostructures

APL Materials
High-mobility spin-polarized two-dimensional electron gas (2DEG) at the interfaces of complex oxide heterostructures provide great potential for spintronic device applications.
Zhao-Cai Wang, Zheng-Nan Li, Mao Ye, Weiyao Zhao, Ren-Kui Zheng   +4 more
doaj   +1 more source

Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs

The Scientific World Journal, 2013
The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail.
Chen-hui Yu, Qing-zhou Luo, Xiang-dong Luo, Pei-sheng Liu   +3 more
doaj   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, Volume 12, Issue 12, 22 June 2026.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency

Advanced Physics Research, Volume 5, Issue 6, June 2026.
Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu, Tianci Tong, Delin Zhang, Tian Wang, Xinze Li, Ping Wang, Yong Jiang   +6 more
wiley   +1 more source

Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures [PDF]

, 2005
The dependences of the stability of the two-dimensional electron gas (2DEG) on the doping concentration and the heterostructure in GaN-based high-electron-mobility transistors were investigated, in an annealing experiment at 500°C under N2 ambient.
Zhou, Yugang, Lau, Kei May, Feng, Zhihong, Cai, Shujun   +3 more
core   +1 more source

Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO3/BaSnO3 heterostructure

Scientific Reports
The two-dimensional electron gas (2DEG) in BaSnO3-based heterostructure (HS) has received tremendous attention in the electronic applications because of its excellent electron migration characteristic.
Yuling Li, Yuxi Huang, Xiaohua Liu, Yaqin Wang, Le Yuan   +4 more
doaj   +1 more source

Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study

Scientific Reports, 2017
One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor, such 2DEG may
I. I. Klimovskikh, A. M. Shikin, M. M. Otrokov, A. Ernst, I. P. Rusinov, O. E. Tereshchenko, V. A. Golyashov, J. Sánchez-Barriga, A. Yu. Varykhalov, O. Rader, K. A. Kokh, E. V. Chulkov   +11 more
doaj   +1 more source

Spin properties of trions in a dense 2DEG

physica status solidi (b), 2010
AbstractReflectivity and photoluminescence spectra from CdTe/CdMgTe modulation‐doped quantum well structures were studied. We have found that in reflectivity spectra the value and the sign of the Zeeman splitting of the trion lines depend on the electron concentration in the quantum well, whereas, the value and sign of the exciton line splitting are ...
Kochereshko, V., Besombes, Lucien, Mariette, Henri, Wojtowicz, T., Karczewski, G., Kossut, J.   +5 more
openaire   +2 more sources

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

AIP Advances, 2015
The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices.
H. J. Harsan Ma, S. W. Zeng, A. Annadi, Z. Huang, T. Venkatesan, Ariando   +5 more
doaj   +1 more source