Results 81 to 90 of about 17,889 (195)

2DEG transistors with constrictions [PDF]

Nature Electronics, 2020
openaire   +1 more source

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Advanced Electronic Materials
Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging.
Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang   +3 more
doaj   +1 more source

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

AIP Advances, 2013
Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V ...
Yingxia Yu, Zhaojun Lin, Chongbiao Luan, Yuanjie Lv, Zhihong Feng, Ming Yang, Yutang Wang, Hong Chen   +7 more
doaj   +1 more source

AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

Applied Physics Express
In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an
Quan Dai, Qingru Wang, Xinkun Zhang, Gaofei Zhi, Xinlu Yang, Yu Zhou, Qian Li, Xiaoning Zhan, Xin Chen, Yaozong Zhong, Jianxun Liu, Qian Sun, Hui Yang   +12 more
doaj   +1 more source

Instability of 2DEG interacting with drifting 3DEG

Semiconductor physics, quantum electronics and optoelectronics, 2008
Dispersion law is studied for high-frequency longitudinal plasma waves in 2DEG (the plane z = 0), separated by thin dielectric layer from half-limited 3DEG. It is shown that drift of 3DEG provokes for special conditions instability of considered plasma waves.
openaire   +2 more sources

Effect of electrostatic confinement on the dome-shaped superconducting phase diagram at the LaAlO3/SrTiO3 interface

Scientific Reports
The two-dimensional electron gas (2DEG) at the LaAlO $$_3$$ /SrTiO $$_3$$ (LAO/STO) interface exhibits gate-tunable superconductivity with a dome-like shape of critical temperature as a function of electron concentration.
Paweł Wójcik, Bartłomiej Szafran, Julian Czarnecki, Roberta Citro, Michał Zegrodnik   +4 more
doaj   +1 more source

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

IEEE Access
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda   +5 more
doaj   +1 more source

Polar Discontinuity Governs Surface Segregation and Interface Termination: A case study of LaInO3/BaSnO3 [PDF]

BIO Web of Conferences
Albrecht Martin
doaj   +1 more source

Experimental Evidence of Electron‐enhanced Interfacial Thermal Conductance Through Two‐Dimensional Electron Gas

Advanced Electronic Materials
It has been a persistent challenge to experimentally distinguish the contribution of electron‐phonon coupling on interfacial thermal conductance from phonon‐dominated pathways.
Xing Fan, Yi Tao, Wangwei Zhang, Chen Li, Bingxin Li, Ziyuan Ma, Zhiming Geng, Xue‐Jun Yan, Ming‐Hui Lu, Di Wu, Deyu Li, Hong Lu, Yan‐Feng Chen   +12 more
doaj   +1 more source

Electric-Field Tunable Anisotropic <i>g</i>-Factor Induced by Spin Pumping. [PDF]

Nano Lett
Shao J, Kronseder M, Guo J, Mangold M, Pan D, Meier TNG, Zhao W, Zhao J, Back CH, Chen L.   +9 more
europepmc   +1 more source