Results 91 to 100 of about 4,877 (226)
Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim +3 more
wiley +1 more source
Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism [PDF]
This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism.
Yuan, Li +11 more
core +1 more source
2D electron gas field‐effect transistors (2DEG‐FETs), employing 2DEG formed at an interface of ultrathin (≈6 nm) Al2O3/ZnO heterostructure as the active channel, exhibit outstanding drive current (≈215 µA), subthreshold swing (≈132 mV dec−1), and field ...
Ji Hyeon Choi +7 more
doaj +1 more source
Optoelectronic transport through quantum Hall edge states
We use GaAs-based quantum point contacts as mesoscopic detectors to locally analyze the flow of photogenerated electrons in a two-dimensional electron gas (2DEG) at perpendicular, quantizing magnetic fields.
C Kastl +4 more
doaj +1 more source
Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode
In this paper, we propose a novel gallium nitride-based multi-two-dimensional-electron-gas (2DEG)-channel self-parallel Gunn diode (SPD) for the first time.
Ying Wang +4 more
doaj +1 more source
Ultrafast modulable 2DEG Huygens metasurface
Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic resonance. However, prevailing active or reconfigurable Huygens metasurfaces, based on all-optical systems, encounter formidable challenges associated with the ...
Hongxin Zeng +15 more
openaire +1 more source
Read the free Plain Language Summary for this article on the Journal blog. Abstract In the context of anthropogenic eutrophication of the biosphere, understanding the impact of nutrient addition on plant diversity–productivity relationships remains a major challenge.
Dai F. Saito +7 more
wiley +1 more source
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure [PDF]
The effect of surface passivation on undoped AlGaN/GaN heterostructures using SiO2, Al2O3, Ta2O5 and Si3N4 as a function of layer thickness is presented.
J. Das +11 more
core +1 more source
ABSTRACT Background Canine atopic dermatitis (cAD) is a multifactorial, inherited skin disease, estimated to affect ≤ 15% of dogs. Studies of skin messenger mRNA in cAD currently use invasive methods, including blood sampling and biopsy collection, whilst advances in human atopic dermatitis study methodology have demonstrated reliable use of minimally ...
Xavier Langon +5 more
wiley +1 more source
Topological 2DEG at the 111 surface of KTaO3 [PDF]
Gabay, M. (2014). Topological 2DEG at the 111 surface of KTaO3.
Gabay, M
core

