Results 91 to 100 of about 17,889 (195)

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Gate-Tunable Single Terahertz Meta-Atom Ultrastrong Light-Matter Coupling. [PDF]

ACS Photonics
Jöchl E, Vieli AL, Hale L, Helmrich F, Turan D, Jarrahi M, Beck M, Faist J, Scalari G.   +8 more
europepmc   +1 more source

InAlN/GaN Detectors for Real-Time Dosimetry in Ultra-High Dose Rate FLASH Radiotherapy. [PDF]

IEEE Sens Lett
Choi SY, Anderson C, Dai K, Fratelli I, Liu YC, Ballentine P, Tan Y, Bardash M, Garty G, Harken A, Kymissis I, Eisner S.   +11 more
europepmc   +1 more source

Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]

Micromachines (Basel)
Prio MH, Morshed M, Muthusamy L, Raju MSEH, Towfeeq I, Gajula D, Koley G.   +6 more
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]

Sci Rep
Dub M, Sai P, Yavorskiy D, Ivonyak Y, Seweryn A, Godlewski M, Prystawko P, Kucharski R, Cywiński G, Knap W, Rumyantsev S.   +10 more
europepmc   +1 more source

Theoretical modelling of oxide 2DEGs

Report on the study of realistic multi-orbital model hamiltonians of oxide 2DEGs, including SOC, treated by tight-binding approaches and Greens function formalism to study buk properties and optize growth parameters in T1.2.
openaire   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source