Results 101 to 110 of about 4,877 (226)

Magneto-photoconductivity of a 2DEG under intense terahertz radiation [PDF]

, 1998
The photoconductivity of a two-dimensional electron gas (2DEG) has been measured under intense, polarised THz radiation. Cyclotron resonance is evident to high temperature and yields a large effective mass, which increases with radiation intensity.
Koenraad, P. M., Langerak, Cjcm, Xu, W., R.A. Lewis, Wolter, J. H., C.J.G.M. Langerak, Waumans, L.R.C., J.H. Wolter, Lewis, R. A., Waumans, L. R. C., P.M. Koenraad, Lewis, R.A., Wolter, J.H., Koenraad, P.M., L.R.C. Waumans, W. Xu, Langerak, C.J.G.M.   +16 more
core   +1 more source

Formation of oxygen vacancy at surfaces of ZnO by trimethylaluminum

APL Materials
The two-dimensional electron gas (2DEG) is a group of electrons that can move freely in horizontal dimensions but are confined in the third direction. It has been reported that atomic layer deposition (ALD) of Al2O3 on various reducible n-type oxides can
Hyobin Eom, Woojin Bae, Ju Young Sung, Ji Hyeon Choi, Kyun Seong Dae, Jae Hyuck Jang, Tae Joo Park, Sang Woon Lee, Bonggeun Shong   +8 more
doaj   +1 more source

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

AIP Advances, 2012
The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing.
Z. Q. Liu, Z. Huang, W. M. Lü, K. Gopinadhan, X. Wang, A. Annadi, T. Venkatesan, Ariando   +7 more
doaj   +1 more source

Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect Transistors [PDF]

, 2011
We present the first AlGaN/GaN tunnel-junction FETs (TJ-FETs) featuring a metal2-D-electron-gas (2DEG) Schottky tunnel junction at the source. The control of the source-to-drain current flow is realized through a gate-controlled tunnel junction instead ...
Yuan, Li, Kevin J. Chen, Chen, Kevin J., Chen, Hongwei, Hongwei Chen, Li Yuan   +5 more
core   +1 more source

Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization [PDF]

, 2000
The contribution of spontaneous and piezoelectric polarization to the formation of a 2DEG in AlGaN/GaN heterostructures was investigated using undoped AlGaN/GaN structures.
C.R. Elsass, R. Vetury, S. Keller, I.P. Smorchkova, U.K. Mishra, B. Heying   +5 more
core   +1 more source

Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature [PDF]

, 2017
© 2017 Author(s). We experimentally observed a terahertz (THz) radiation of electrically driven 2D electron gas (2DEG) plasmons in AlGaN/AlN/GaN structures at T = 110 K.
Kašalynas, I, I. Grigelionis, P. Prystawko, Seniutinas, G, G. Valušis, Grigelionis, I, V. Jakštas, M. Leszczyński, Juodkazis, S, V. Janonis, Janonis, V, G. Seniutinas, Leszczyński, M, Valušis, G, S. Juodkazis, Jakštas, V, Prystawko, P, I. Kašalynas   +17 more
core   +1 more source

Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices

AIP Advances
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling corresponds to a non ...
Laura K. Diebel, Lukas G. Zinkl, Andreas Hötzinger, Felix Reichmann, Marco Lisker, Yuji Yamamoto, Dominique Bougeard   +6 more
doaj   +1 more source

2DEG transistors with constrictions [PDF]

Nature Electronics, 2020
openaire   +1 more source

On the development of a far-infrared bolometric detector using a 2DEG as the absorbing medium [PDF]

This thesis describes the development of a far-infrared bolometric detector using a two-dimensional electron gas (2DEG) as the detecting medium. The 2DEG is formed at a AlGaAs/GaAs heterojunction made of layers of undoped GaAs and AlGaAs and highly doped
Bacchus, Ian Dean.
core  

Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors [PDF]

, 2014
Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET).
Yuan, Li, Zhou, Chunhua, Chen, Hongwei, Chen, Jing   +3 more
core