Catalytic Electron-Driven Non-Equilibrium Phase Transition in Quantum Electronic Heterostructures. [PDF]
Park BC +5 more
europepmc +1 more source
Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
Omar A, Loan SA.
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Cryogenic in situ fabrication of reversible direct write logic circuits and devices. [PDF]
Hong Y +14 more
europepmc +1 more source
Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. [PDF]
Cheng Q +9 more
europepmc +1 more source
Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas. [PDF]
Bisignano I +5 more
europepmc +1 more source
Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
europepmc +1 more source
Influence of LPCVD-Si<sub>3</sub>N<sub>4</sub> Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]
Jiang G +8 more
europepmc +1 more source
Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
europepmc +1 more source
Cavity-mediated coupling between local and nonlocal modes in Landau polaritons. [PDF]
Endo SR +11 more
europepmc +1 more source
Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
Dudekula S +5 more
europepmc +1 more source

