Results 101 to 110 of about 4,873 (226)

高电子迁移率GaAs/AlxGa（1-x）As二维电子气（2DEG）异质结结构参数优化研究

, 1995
采用三角阱近似,考虑了GaAs/Al_xGa_(1-x)As二维电子气(2DEG)异质结中七种主要的散射机制,计算了2DEG电子迁移率与隔离层厚度(d)和Al组分(x)的关系,对GaAs/Al_xGa_(1-x)As异质结的结构参数进行了优化分析。就作者所知,该文首次计算了2DEG电子迁移率与Al组分x的关系 ...
梁基本, 陈涌海, 王占国, 廖奇为, 林兰英, 杨斌, 朱战萍, 徐波, 李伟   +8 more
core  

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Advanced Electronic Materials
Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging.
Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang   +3 more
doaj   +1 more source

Doping concentration and structural dependences of the thermal stability of the 2DEG in GaN-based high-electron-mobility transistor structures

, 2005
The dependences of the stability of the two-dimensional electron gas (2DEG) on the doping concentration and the heterostructure in GaN-based high-electron-mobility transistors were investigated, in an annealing experiment at 500°C under N2 ambient.
Zhou, Yugang, Lau, Kei May, Feng, Zhihong, Cai, Shujun   +3 more
core   +1 more source

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

AIP Advances, 2013
Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V ...
Yingxia Yu, Zhaojun Lin, Chongbiao Luan, Yuanjie Lv, Zhihong Feng, Ming Yang, Yutang Wang, Hong Chen   +7 more
doaj   +1 more source

Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

, 2012
This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism.
Yuan, Li, Hongtao Zhou, Zhang, Junbin, Chiah, Siau Ben, Xing Zhou, Junbin Zhang, Binit Syamal, Syamal, Binit, Zhou, Hongtao, Zhou, Xing, Siau Ben Chiah, Li Yuan   +11 more
core   +1 more source

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

, 2004
The effect of surface passivation on undoped AlGaN/GaN heterostructures using SiO2, Al2O3, Ta2O5 and Si3N4 as a function of layer thickness is presented.
J. Das, W. Wang, J. Derluyn, W. Ruythooren, B. Nauwelaers, M. Leys, S. Boeykens, D. Schreurs, M. Germain, S. Degroote, I. Dewolf, G. Borghs   +11 more
core   +1 more source

Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

APL Materials, 2014
Realization of a fully metallic two-dimensional electron gas (2DEG) at the interface between artificially grown LaAlO3 and SrTiO3 thin films has been an exciting challenge.
Danfeng Li, Stefano Gariglio, Claudia Cancellieri, Alexandre Fête, Daniela Stornaiuolo, Jean-Marc Triscone   +5 more
doaj   +1 more source

Machine learning methods for background potential estimation in 2DEGs

Physica E: Low-dimensional Systems and Nanostructures
In the realm of quantum-effect devices and materials, two-dimensional electron gases (2DEGs) stand as fundamental structures that promise transformative technologies. However, the presence of impurities and defects in 2DEGs poses substantial challenges, impacting carrier mobility, conductivity, and quantum coherence time.
Carlo da Cunha, Nobuyuki Aoki, David K. Ferry, Kevin Vora, Yu Zhang   +4 more
openaire   +2 more sources

Magneto-photoconductivity of a 2DEG under intense terahertz radiation

, 1998
The photoconductivity of a two-dimensional electron gas (2DEG) has been measured under intense, polarised THz radiation. Cyclotron resonance is evident to high temperature and yields a large effective mass, which increases with radiation intensity.
Koenraad, P. M., Langerak, Cjcm, Xu, W., R.A. Lewis, Wolter, J. H., C.J.G.M. Langerak, Waumans, L.R.C., J.H. Wolter, Lewis, R. A., Waumans, L. R. C., P.M. Koenraad, Lewis, R.A., Wolter, J.H., Koenraad, P.M., L.R.C. Waumans, W. Xu, Langerak, C.J.G.M.   +16 more
core   +1 more source

AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

Applied Physics Express
In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an
Quan Dai, Qingru Wang, Xinkun Zhang, Gaofei Zhi, Xinlu Yang, Yu Zhou, Qian Li, Xiaoning Zhan, Xin Chen, Yaozong Zhong, Jianxun Liu, Qian Sun, Hui Yang   +12 more
doaj   +1 more source